一种2～4GHz宽带接收机的小型化前端设计

针对2~4 GHz的超宽频带,提出了一种宽带接收机的前端设计方法,其中包括射频信道设计、频率合成器的设计以及基带电路设计。鉴于小型化的设计思想,射频前端采用零中频接收机的架构,使用LTCC滤波器实现噪声系数优于8 d B,输出三阶截断点优于27 d Bm(低噪声模式下)。频率合成器采用集成VCO的锁相环芯片ADF4351,实现单边带相位噪声优于-110 d Bc/Hz@200 k Hz。基带电路采用正交解调器ADL5380和12位双通道AD转换器AD9238,可实现带宽为20 MHz的I/Q双路同时解调。通过FPGA或DSP处理,可广泛用于便携式小型化的监测接收机或通信接收机。     

射频锁相环型频率合成器的CMOS实现

本论文实现了一个射频锁相环型频率合成器,它集成了压控振荡器、双模预分频器、鉴频鉴相器、电荷泵、各种数字计数器、数字寄存器和控制电路以及与基带电路的串行接口.它的鉴频鉴相频率、输出频率和电荷泵的电流大小都可以通过串行接口进行控制,还实现了内部压控振荡器和外部压控振荡器选择、功耗控制等功能,这些都使得该频率合成器具有极大的适应性,可以应用于多种通信系统中.该锁相环型频率合成器已经采用0.25μm CMOS工艺实现,测试结果表明,该频率合成器使用内部压控振荡器时的锁定范围为1.82GHz~1.96GHz,在偏离中心频率25MHz处的相位噪声可以达到-119.25dBc/Hz.该频率合成器的模拟部分采用2.7V的电源电压,消耗的电流约为48mA.     

一种基于FPGA与DSP的数字射频发射机的设计与实现

射频发射机是通信系统中的一种必不可少的设备。本文设计了一种包括数字基带电路和发射电路的数字射频发射机。数字基带电路主要是使用DSP芯片来实现,通过对DSP的编程来实现数据信号的封装与编码;数字基带电路能提供方便的用户接口以实现与上位机的通信,以及组网等功能。发射电路是采用射频测试平台技术来实现,使用模块化的结构设计。在ADS软件环境下对数字射频发射机的电路进行了仿真,仿真结果说明本文的数字射频发射机的设计是有效和可行的。     

浅析中波发射机的频率合成器设计

当前中波广播发射机的频率合成器一般都采用直接数字频率合成技术(DDS)设计,频率合成器输出的射频信号用作中波发射机工作的RF载波,同时调幅立体声广播和多部发射机并机工作时由DDS频率合成器提供激励射频载波的I/O接口,同时它还具有保护切换功能,当发生驻波比故障时进行保护性切换.     

一种基于FPGA与DSP的数字射频发射机的设计与实现

射频发射机作为通信系统中的重要设备,文章将设计一种基于FPGA与DSP的数字射频发射机。主要利用DSP芯片实现数字基带电路的运行,利用DSP进行编程,可以使数据信号完成封装与编码。使用数字基带电路可以为用户提供很大便利,加强与上位机的通信效果,还可以提升组网等相关功能的水平。发射电路利用了射频测试平台技术处理,同时结合模块化的结构设计方式。     

基于DDS的RFID频率合成器设计

随着相关技术的不断完善和成熟,RFID 产业将成为一个新兴的高技术产业群,成为国民经济新的增长点.该文根据EPCglobalTM Class 1 Generation 2标准中有关RFID跳频频率的规定,结合RFID射频前端的开发要求,设计出一款新型的RFID频率合成器.频率合成器以Analog Devices Inc公司的时钟集成电路AD9540(内含DDS模块)为核心,通过单片机AT89C51加以配置及控制.输出的DDS跳频信号与800 MHz信号混频得到射频前端所需的832～858 MHz跳频信号,通过滤波及放大最终输出.实验证明,基于DDS的跳频速度快,频率精确度高,各方面性能指标符合标准要求.     

一种OOK/FSK调制模式的射频发射机电路设计

设计了一种具有OOK/FSK两种调制模式的射频发射机前端电路。它由一个频率综合器芯片和一个功率放大器芯片组成。发射机电路采用SMIC 0.18 μm CMOS工艺设计。测试结果表明,发射机最大输出功率为－0.31 dBm,PLL的相位噪声为－118.79 dBc/Hz@1 MHz。该发射机可以实现OOK/FSK两种调制方式,在OOK模式下,数据率达到10 Mb/s。整个电路采用1.8 V供电,功耗为43 mW。     

链路复用的跳频收发机射频前端设计

针对便携式跳频电台,设计了一种收发链路复用的收发信机射频前端。该收发信机射频前端可以提高抗干扰能力,达到降低功耗、减小设备体积的目的。详细介绍了收发信机射频前端的设计链路和硬件电路实现,设计中收发链路均采用二次变频结构,输出和输入频率在110～512 MHz之间连续可变。最后,对射频前端进行性能测试,测试结果表明所设计的射频前端实现了低相噪、低杂散、带内波动小和高速跳频等指标。     

频率综合器的小型化设计

小型化是现代电子通信系统的一个重要的研究方向,射频信道的小型化设计重点是频率综合器的小型化设计。介绍了采用集成度很高的频率合成器芯片Si4133来设计频率综合器的方法、Si4133频率合成器芯片的工作原理和功能结构,以及在具体通信系统中以该芯片为核心的频率源的实现过程。测试结果显示,该频率源相位噪声较低、杂散低,满足设计和系统使用要求。     

一种Ka波段点频锁相频率源设计

针对某射频系统特殊空间小型化布局需求,采用取样锁相与倍频放大混合集成技术,研制Ka波段点频源。介绍利用ADF4016频率合成器、压控振荡器、MSP430单片机等设计方案研制X波段点频锁相源,再通过倍频、放大、滤波等链路方案实现Ka波段点频源。测试结果表明,Ka波段点频源工作频率、相位噪声、输出功率等技术指标同设计相吻合。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.