空穴传输层NPB中掺杂Alq3制备高性能的蓝光器件

研究了在空穴传输层NPB中掺杂Alq3制备高性能的蓝光有机电致发光器件（OLED）。采用传统的材料和结构，在空穴传输层NPB中掺杂Alq3，在掺杂浓度为3％时，OLED的色坐标为（0．17，0．19）、亮度为10770cd／m^2（在13V时）和最大效率为4．1cd／A。在同等条件下，Alq3掺杂降低了开启电压，在7V时亮度达到了118．8cd／m^2。研究分析表明，OLED性能的提高是由于NPB的HOMO能级比Alq3的HOMO能级高，掺杂剂Alq3对空穴有散射作用，阻挡了部分空穴的传输，降低了空穴的迁移率；而Alq3又是很好的电子传输材料，Alq3掺杂提高了空穴和电子在发光层中的注入平衡，有利于激子的形成，从而提高了器件的性能。     

掺杂C545T对2T-NATA作为空穴注入层OLED性能的影响

实验制备了6组结构为ITO/2T-NATA(15 nm)/NPB(25 nm)/Alq3(20 nm):C545T(x%)/Alq3(30 nm)/LiF(1 nm)/Al(100 nm)的绿光多层结构OLED器件,其中x分别为0、1、2、3、4和5.比较了不同掺杂浓度条件下OLED器件的电致发光特性,结果表明:用2T-NATA作为空穴注入层可有效提高载流子的注入效果,同样能够达到高亮度.将C545T掺杂到Alq3中能够明显改善器件的发光亮度和色纯度,并调节载流子复合区域的位置,有效提高发光效率.掺杂C545T对器件性能的影响显著,随着C545T掺杂浓度的提高,电流和亮度先增大后减小.当掺杂浓度为3%时,14 V电压下的最大发光亮度达到12 418 cd/m2,浓度为2%时的器件,在12 V驱动电压下的最大电流效率为10.22 cd/A.     

基于MCzHQZn的有机电致发光器件

通过结构为ITO/2T-NATA(20nm/NPBx(20nm)/MCzHQZn(30nm)/BCP(10nm)/Alq3(20nm)/LiF(0.5nm)/Al、ITO/2T-NATA(30nm/MCzHQZn(30nm)/BCP(10nm)/Alq3(30nm)/LiF(0.5nm)/Al和ITO/2T-NATA(20nm/MCzHQZn(30nm)/NPBx(16nm)/BCP(10nm)/Alq3(25nm)/LiF(0.5nm)/Al的3组有机电致发光器件(OLED),证明了MCzHQZn既具有空穴传输特性,又具有较好的发光特性。MCzHQZn在器件1中作发光层,器件最大亮度在电压16V时达到3692cd/m2,电压13V时的最大效率为0.90cd/A,发光的峰值波长为564nm;MCzHQZn在器件2中既作发光层又作空穴传输层,器件最大亮度在电压为13V时达到1929cd/m2,电压12V时的最大效率为0.57cd/A,发光的峰值波长也为564nm;MCzHQZn在器件3中作空穴传输层,由NPBx作发光层,器件最大亮度在电压为14V时达到3556cd/m2,电压9V时的最大效率为1.08cd/A,发光的峰值波长为444nm。     

基于NPBX掺杂CzHQZn的黄色有机电致发光器件

利用一种既具有空穴传输特性又具有发光特性的新型荧光染料N-乙基咔唑-2-乙烯基-8-羟基喹啉锌[(E)-2-(2-(9-ethyl-9H-carbazol-3-yl)vinyl)quinolato-zinc,CzHQZn]掺杂在NPBX中作为空穴传输层,CzHQZn同时还作为发光的主体,制备了结构为ITO/2T-NATA(30nm)/NPBX:25%CzHQZn(xnm)/BCP(10nm)/Alq3(60-x)nm/LiF(0.5nm)/Al的有机发光器件(x为掺杂发光层的厚度),掺杂发光层的厚度按照15,20,25,30nm进行变化,相应改变Alq3的厚度,使得这两者的总厚度为60nm保持不变。当掺杂发光层的厚度是20nm,Alq3的厚度是40nm,其他层厚度保持不变时,器件在4V电压下实现了黄光发射,色坐标为(0.514 6,0.470 5),亮度是1.078cd/m2。在14V的电压下,器件最大发光亮度为449 0cd/m2,最大发光效率为0.98cd/A。     

空穴注入层2T-NATA对OLED器件性能的影响

为了提高有机电致发光器件OLED的发光效率,引入2T-NATA作为空穴注入层,制备了结构为ITO/2T-NATA(Xnm)/NPB(25nm)/Alq3:C545T(20nm:质量分数4.5%)/Alq3(30nm)/LiF(1nm)/Al(100nm)的绿光器件,其中X为空穴注入层2T-NATA厚度。分析了2T-NATA的蒸镀厚度分别0,5,10,15,20,25,30,35nm时器件的发光性能。结果表明,2T-NATA的HOMO能级较好的与ITO功函数匹配,降低了空穴注入势垒,引入空穴注入层2T-NATA提高了器件的发光亮度和效率。当2T-NATA厚度为15nm时,器件的效果最好,起亮电压只需2.87V,亮度最高达到18000cd/m2,是不引入空穴注入层亮度的5倍多,在12V时发光效率可达11.4cd/A。     

双主体掺杂红色有机电致发光显示器件的研究

利用三源共蒸发技术制作了双主体掺杂红色有机电致发光显示器件,研究了不同掺杂比例下,Alq3∶Rubrene∶DCJTB双主体掺杂系统的红色OLED器件,器件结构为ITO/HIL/NPB/Alq3∶Rubrene∶DCJTB/Alq3/LiF/Al,其中发光层Alq3∶Rubren∶DCJTB是三掺杂发光结构体系。综合研究分析了Alq3与Rubrene的掺杂比例和发光效率、色纯度之间的关系,当Rubrene的掺杂比例达到60%时,器件达到最佳效果;电压9V时,该器件发光亮度达到3580cd/m2,发光效率达到4.58cd/A,功率效率也达到1.60lm/W,相应的色坐标为(0.65,0.35)。     

利用Ir(ppy)_3敏化CzHQZn提高OLED的性能

用CzHQZn作为受主,利用磷光敏化的方法制备了有机电致黄光和白光器件。黄光器件采用Ir(ppy)3掺杂4,4-N,N′-=咔唑基联苯(CBP),敏化新的黄光材料CzHQZn作为发光层,当发光层厚度为18nm时器件性能最好,最大发光效率为3.26cd/A(at10V),最大发光亮度为17560cd/m2(at10V);白光器件采用多发光层结构,结合ADN的蓝光复合发光,同时加入了电子阻挡层(NPBX)和空穴阻挡层(BCP),获得的白光器件最大发光效率为2.94cd/A(at8V),最大亮度为11089cd/m2(at13V)。     

双层结构有机电致发光器件发光层厚度的优化研究

以TPD为空穴传输层,Alq3为发光层兼做电子传输层,用真空蒸镀方法制备了双层结构ITO/TPD/Alq3/Mg∶Ag器件,并系统地研究了发光层厚度对器件发光性能的影响.通过固定TPD厚度为40 nm,Alq3层厚度x分别为20,30,40,50,60和70 nm,共制备了六种结构的器件.结果表明,器件电流随着x的增大而减小,启亮电压随着x的增加而增大,而器件亮度和流明效率随着x的增大先增大再减小;x=40 nm的器件在15 V电压下具有最大亮度值13 750 cd/m2,在5 V电压下具有最大流明效率值0.862 lm/W.     

以CzHQZn为主体的有机发光器件的发光效率

采用真空热蒸镀技术,分别制备了结构为ITO/2T-NATA(25nm)/CzHQZn(10～25nm)/TPBi(35nm)/LiF(0.5nm)/Al、ITO/2T-NATA(30nm)/CBP:6%Ir(ppy)3:x%CzHQZn(20nm)/Alq3(50nm)/LiF(0.5nm)/Al和ITO/2T-NATA(30nm)/CBP:6%Ir(ppy)3:10%CzHQZn(xnm)/Alq3((70-x)nm)/LiF(0.5nm)/Al的3组有机电致发光器件(OLED)。器件中,CzHQZn既有空穴传输特性,又是黄光发射的主体。为了提高其发光效率,利用磷光敏化技术,研究了掺杂层中不同掺杂浓度和掺杂层不同厚度时器件的发光效率。结果表明,器件的效率随着掺杂发光层的厚度和掺杂浓度的变化而改变,当发光层的厚度为18nm时,CzHQZn掺杂浓度为10%的器件性能较好;在10V电压下,器件的最大电流效率达到3.26cd/A,色坐标为(0.4238,0.5064),最大亮度达到17560cd/m2。     

基于DSA-ph的高效蓝色有机电致发光器件

以NPBX掺杂3%的DSA-ph作为发光层,BCP或TAZ作为空穴阻挡层,Alq3或Bphen作为电子传输层制作了一组蓝色有机电致发光器件。通过调整不同的空穴阻挡层与电子传输层之间的组合,得到了一组高效的蓝光OLED。测试结果表明,当空穴阻挡层为TAZ,电子传输层为Bphen时,器件的性能最优。当驱动电压为5V时,器件最大电流效率为4.59cd/A。在12V时亮度最大,为6 087cd/m2。     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.