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采用InP/InGaAs HBT与PIN光探测器单片集成方案,对光接收光电集成电路(OEIC)的外延材料结构和生长、电路设计、制作工艺和性能测试进行了研究.基于自对准InP/InGaAs HBT工艺,实现了1.55μm波长单片集成光接收OEIC.发射极尺寸2μm×8μm的InP/InGaAs HBT直流增益为40,截止频率和最高振荡频率分别为45和54GHz;集成InGaAs PIN光探测器在-5V下响应度为0.45A/W@1.55/μm,暗电流小于10nA,-3dB带宽达到10.6GHz;研制的HBT/PIN单片集成光接收OEIC在2.5和3.0Gb/s速率非归零223-1伪随机码传输工作时可以观察到张开的眼图,灵敏度≤-15.2dBm@BER=10-9. 相似文献
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对SiGe HBT低频噪声的各噪声源进行了较全面的分析,据此建立了SPICE噪声等效电路模型,进一步用PSPICE软件对SiGe HBT的低频噪声特性进行了仿真模拟.研究了频率、基极电阻、工作电流和温度等因素对低频噪声的影响.模拟结果表明,相较于Si BJT和GaAs HBT,SiGe HBT具有更好的低频噪声特性;在低频范围内,可通过减小基极电阻、减小工作电流密度或减小发射极面积、降低器件的工作温度等措施来有效改善SiGe HBT的低频噪声特性.所得结果对SiGe HBT的设计和应用有重要意义. 相似文献
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采用InP/InGaAs HBT与PIN光探测器单片集成方案,对光接收光电集成电路(OEIC)的外延材料结构和生长、电路设计、制作工艺和性能测试进行了研究.基于自对准InP/InGaAs HBT工艺,实现了1.55μm波长单片集成光接收OEIC.发射极尺寸2μm×8μm的InP/InGaAs HBT直流增益为40,截止频率和最高振荡频率分别为45和54GHz;集成InGaAs PIN光探测器在-5V下响应度为0.45A/W@1.55/μm,暗电流小于10nA,-3dB带宽达到10.6GHz;研制的HBT/PIN单片集成光接收OEIC在2.5和3.0Gb/s速率非归零223-1伪随机码传输工作时可以观察到张开的眼图,灵敏度≤-15.2dBm@BER=10-9. 相似文献
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版图尺寸对SiGe/Si HBT高频噪声特性的影响 总被引:1,自引:0,他引:1
从实验上研究了版图尺寸对Si/SiGe HBT高频噪声特性的影响。结果表明,在现有工艺条件下,减少外基区电阻(即减少发射极与基区间距),对降低高频噪声很显著。增加基极条数、增加条长也可减少基极电阻,降低高频噪声。发射极条宽从2μm减少为1μm,对噪声的改善很有限。对1μm或2μm条宽,40μm条长的5个基极条或9个基极条的SiGe HBT,在片测试表明,频率从0.4 GHz增加到1.2 GHz,噪声系数在2.5~4.6 dB之间变化。 相似文献
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研究了HBT产生负阻的可能机制,通过对材料结构和器件结构的特殊设计,采用常规台面HBT工艺,先后研制出3类高电流峰谷比的恒压控制型负阻HBT.超薄基区HBT的负阻特性是由超薄基区串联电阻压降调制效应造成的,在GaAs基InGaP/GaAs和AlGaAs/GaAs体系DHBT中均得到了验证.双基区和电阻栅型负阻HBT均为复合型负阻器件.双基区负阻HBT通过刻断基区,电阻栅负阻HBT通过在集电区制作基极金属形成集电区反型层,构成纵向npn与横向pnp的复合结构,由反馈结构(pnp)的集电极电流来控制主结构(npn)的基极电流从而产生负阻特性.3类负阻HBT与常规HBT在结构和工艺上兼容,兼具HBT的高速高频特性和负阻器件的双稳、自锁、节省器件的优点. 相似文献
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The equivalent-input-noise-current spectral density for a monolithically integrated optical receiver front-end using InP/InGaAs heterojunction bipolar transistors and a p-i-n photodiode is computed from a small-signal model. Particular attention is paid to the contributions to the noise from the HBT in the first stage of the amplifier. It is shown that with transistors designed for 1-10-Gb/s receivers the base current shot noise dominates in the frequency range from 10 MHz to 1 GHz, and both the base resistance thermal noise and the collector current shot noise are important at higher frequencies. Device features which determine the extent of these noise sources are identified, and ways to improve the noise performance are discussed 相似文献
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Guofu Niu Jin Tang Zhiming Feng Joseph A.J. Harame D.L. 《Microwave Theory and Techniques》2005,53(2):506-514
This paper examines the impact of SiGe HBT scaling on 1/f noise and phase noise of oscillators and frequency synthesizers. The increase of transistor speed with scaling is shown to significantly increase the sensitivity of oscillation frequency to 1/f noise and, thus, degrade close-in phase noise, but decrease the sensitivity of oscillation frequency to base current shot noise and base resistance thermal noises. The results show that corner offset frequency defined by the intersect of the 1/f3 and 1/f2 phase noise has little to do with the traditional 1/f corner frequency. The relative importance of individual noise sources in determining phase noise is examined as a function of technology scaling, device sizing, and oscillation frequency. The collector current shot noise and base resistance noise are shown to set the fundamental limits of phase noise reduction. A methodology to identify the maximum tolerable 1/f K factor is established and demonstrated for the HBTs used 相似文献
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Thorsell M. Fagerlind M. Andersson K. Billstrom N. Rorsman N. 《Microwave and Wireless Components Letters, IEEE》2010,20(1):55-57
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Transistors in aggressively scaled CMOS technologies have fT greater than 150 GHz, which exceeds requirements for most existing commercial applications below 10 GHz. Excess transistor performance can be traded-off for cost by designing out inductors. This paper presents a prototype which exploits the speed of transistors to design highly integrated broadband receiver front-ends. The inductor-less prototype operates from 2 to 5.8 GHz and dissipates 85 mW at 5 GHz while occupying 0.2 mm2 active area. It provides 44 dB of gain, 3.4 dB double side band noise figure, 21 dBm in-band IIP3 in the highest gain mode and 15 dB input matching. 相似文献
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Aboudou A. Vilcot J.P. Decoster D. Chenoufi A. Delhaye E. Boissenot P. Varin C. Deschamps F. Lecuru I. 《Electronics letters》1991,27(10):793-795
An interdigitated GaAlAs/GaAs metal-semiconductor-metal photodetector designed to be fully integrable with HIGFET-based digital integrated circuits and which exhibit a dark current as low as 100 pA at 10 V bias voltage is presented. Static and dynamic responsivities are reported, as well as noise properties. Photocurrents (for bias voltage higher than 4 V) comparable to those measured with a pin photodiode, and a shot noise cutoff frequency in excess of 13 GHz were recorded.<> 相似文献
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Jungemann C. Neinhus B. Meinerzhagen B. Dutton R.W. 《Electron Devices, IEEE Transactions on》2004,51(6):956-961
A comprehensive investigation of the SPICE and unified compact noise models is performed by comparison with the more fundamental hierarchical hydrodynamic device model. It is shown that the rather simple SPICE and unified compact noise models yield good results for frequencies up to 10 GHz for state-of-the-art SiGe HBTs with a low base resistance. The base noise resistance, a key parameter of the compact noise models turns out to be independent of frequency and bias. It can be well estimated based on the sheet resistance of the intrinsic and extrinsic base or with the modified circle-fit method. The unified model, which in comparison to the SPICE model considers in addition the finite transit time of shot noise, is found to be somewhat more accurate than the SPICE model, especially at higher frequencies and collector currents. But this is achieved at the expense of a transit time parameter which cannot be determined without accurate and detailed noise measurements or physics-based numerical simulations. 相似文献
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An accurate analysis of noise in rectangular bipolar transistors is developed from a distributed model using a collective approach and the transport noise theory. In this model, emitter current crowding effect are taken into account and noise behaviour at intermediate and low values of source impedance is precisely described. The structure of teh equivalent lumped circuit is established, and the analytical relationships characterizing its elements in an extended range of current and frequency are given. It is shown that; (a) the active base region must be represented by a nonlinear impedance with a generalized thermal noise source; (b) for low source impedances the equivalent input voltage shot noise generator is higher than predicted by low injection theories. Furthermore it is found that emitter crowding induces a uniform and important decrease in (a) base impedance (b) thermal noise and (c) the correlation between shot noise generators of the equivalent lumped circuit. Finally it appears that classical low injection theories are valid when crowding occurs in transistors biased with high source impedances. 相似文献
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《Microwave Theory and Techniques》1978,26(12):935-938
A millimeter-wave cryogenic receiver has been built for the 60-90-GHz frequency band using GaAs mixer diodes prepared by molecuIar beam epitaxy (MBE). The diodes are mounted in a reduced-height image rejecting waveguide mixer which is followed by a cooled parametric amplifier at 4.5-5.0 GHz. At a temperature of 18 K the receiver has a total single-sideband (SSB) system temperature of 312 K at a frequency of 81 GHz. This is the lowest system temperature ever reported for a resistive mixer receiver. The low-noise operation of the mixer is seen to be a result of 1) the short-circuiting of the noise entering the image port and 2) an MBE mixer diode with a noise temperature which is consistent with the theoretical shot noise from the junction and the thermal noise from the series resistance. 相似文献
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《Electron Devices, IEEE Transactions on》1971,18(7):425-431
Noise performance of a high-gain transistor is presented. It is shown that both burst noise and flicker noise in high-gain transistors are not as important as those in low-gain units. At very small biases, less than 10 µA for the given transistor, the limiting noise of the transistor is dominated by the shot noise. In the higher bias region the thermal noise of the base resistance is the dominant noise of the transistor. It is also demonstrated that from noise measurement the base resistance rb'b , the transconductance gm , and the small signal common emitter-current gain β can be accurately determined. 相似文献
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《Solid-State Circuits, IEEE Journal of》1969,4(2):75-80
A transistor model having a distributed base region and distributed sources of noise is analyzed. An equivalent lumped-noise model is derived. The model includes all the conventional sources of shot noise and thermal noise in the base region. It is found that the transistor shot noise is uneffected by the distributed nature of the base. Mean-square thermal noise is found to be proportional to the real part of a complex base impedance. An excess noise source due to the distributed base is found but is shown to be negligible compared to thermal noise generated in the base. The distributed-noise model reduces to the conventional lumped-noise model at low frequencies. 相似文献