2.4GHz无线传感器网络SoC芯片上混频器的设计

介绍了一种采用SMIC 0.18μm RFCMOS 工艺,设计了一种应用于2.4GHz无线传感器网络SoC芯片的射频发射机上混频器模块电路单元,其中转换增益为-6.3 dB,输入1 dB压缩点为-4.6 dBm.工作电压为1.8 V,功耗为5.4 mW,工作频率范围为2.4～2.483 5 GHz,工作温度范围为-20～+80℃低功耗的上混频器.上混频器芯片的面积为0.56 mm2.     

一种基于0.18-μm CMOS工艺的新型超宽频带毫米波混频器设计与分析

本文提出了一种超宽频带毫米波混频器电路.混频器采用分布式拓扑结构和中频功率合成技术,具有宽带宽和高转换增益.该混频器采用TSMC 0.18-μm CMOS工艺设计并制造,芯片总面积为1.67mm².测试结果表明:混频器工作频率从8GHz到40GHz,中频频率为2.5GHz时的转换增益为-0.2dB至4dB,其本振到中频端口和射频到中频端口间的隔离度均大于50dB.整个电路的直流功耗小于32mW.     

一种2.4GHz 0.35μm CMOS Gilbert下变频器

利用0.35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2.452GHz,2.45GHz和2MHz.测试表明:在3.3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

一种高增益低噪声CMOS混频器设计

设计了一种基于跨导互补结构的电流注入混频器,通过在吉尔伯特混频器电路的本振开关管源极增加PMOS管形成电流注入电路减小本振端的偏置电流,改善电路的闪烁噪声和增大电路的增益.采用SMIC 0.18μm标准CMOS工艺设计.在本振(LO)信号的频率为1.571 GHz,射频(RF)信号频率为1.575 GHz时,混频器的增益为17.5 dB,噪声系数(NF)为8.35 dB,三阶交调截止点输入功率(IIP3)为-4.6 dBm.混频器工作电压1.8 V.直流电流为8.8 mA,版图总面积为0.63 mm × 0.78 mm.     

基于肖特基二极管的450 GHz二次谐波混频器

为了在亚毫米波波段进行遥感探测,研制了450GHz的二次谐波混频器.混频器的核心部件是一对反向并联的肖特基二极管,长度为74μm,截止频率高达8THz.在石英基片上搭建悬置微带的匹配电路,并采用一分为二的金属腔体.在二极管的仿真中获得二极管管芯的输入阻抗,然后考虑二极管的封装、匹配电路,仿真得到混频器的单边带变频损耗为8.0dB,所需本振功率为4mW.测试表明,本混频器的单边带变频损耗的最佳值为14.0dB,433~451GHz之间的损耗小于17.0dB,3dB带宽为18GHz,所需的本振功率为5mW.     

用于便携式GPS接收机中的5.4mW低噪声高增益CMOS射频前端电路设计

设计了应用于便携式GPS接收机射频前端中的CMOS低噪声放大器和正交混频器. 该电路中的低噪声放大器采用带源端电感负反馈的输入级,并引入功耗约束下的噪声和输入同时匹配技术. 正交混频器基于吉尔伯特单元. 电路采用TSMC 0.18μm RF CMOS工艺实现,总的电压转换增益为35dB,级联噪声系数为2.4dB,输入1dB压缩点为-22dBm,输入匹配良好,输入回损为-22.3dB, 在1.8V电压供电下,整个全差分电路功耗为5.4mW.     

2.4GHz 0.35μm CMOS Gilbert下变频器

利用0 35μm CMOS工艺实现了一种用于低中频接收机的Gilbert型下变频器.其中,混频器的输出级采用折叠级联输出,射频信号、本振信号和中频信号的频率分别为2 452GHz,2 45GHz和2MHz.测试表明:在3 3V电源电压条件下,整个混频器电路消耗的电流约为4mA,转换增益超过6dB,输入1dB压缩点约为-11dBm.     

一种基于准浮栅技术的0.6V,2.4GHz CMOS混频器

讨论分析了准浮栅晶体管的工作原理、电气特性及其等效电路.基于准浮栅NMOS晶体管,对Gilbert混频器电路结构进行改进设计,实现了超低压混频器.基于TSMC 0.25μm CMOS工艺的BSIM3V3模型,采用Hspice对混频器进行了仿真,仿真结果显示,该混频器在0.6V的单电源电压下,仍可以对2.4GHz的正弦信号进行混频,转换增益为-21.8dB,三阶输入截止点的值为34.6dB.     

用于便携式GPS接收机中的5.4mW低噪声高增益CMOS射频前端电路设计

设计了应用于便携式GPS接收机射频前端中的CMOS低噪声放大器和正交混频器.该电路中的低噪声放大器采用带源端电感负反馈的输入级,并引入功耗约束下的噪声和输入同时匹配技术.正交混频器基于吉尔伯特单元.电路采用TSMC 0.18μm RFCMOS工艺实现,总的电压转换增益为35dB,级联噪声系数为2.4dB,输入ldB压缩点为-22dBm,输入匹配良好,输入回损为-22.3dB,在1.8V电压供电下,整个全差分电路功耗为5.4mW.     

一种单片毫米波双平衡二极管混频器

本文介绍了一种采用WIN 0.150.15μm pHEMT设计的单片双平横二极管混频器。本次设计中采用了改进的折叠型Marchand balun来减少芯片面积。同时电路中还使用U型耦合线改善了端口之间的隔离度并提供了中频输出端口。该混频器取得了较好的测试结果,在26-40 GHz频带范围内,混频器具有较低的变频损耗为5.5-10.7dB,隔离度大于26dB,并且中频带宽为DC-14 GHz,芯片面积为0.96mm2     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.