一种采用改进放大器的12位40兆采样率的流水线模数转换器

本文设计实现了一种采用改进放大器的12位40兆采样率的流水线模数转换器。基于该模数转换器的结构,本文分析了影响模数转换器的精度的放大器非理想因素,并提出了针对放大器的补偿技术。该技术消除了增益提高技术和开关电容共模反馈结构对放大器的带宽和相位裕度的限制。整个模数转换器使用0.35μm标准CMOS工艺设计制作。测试结果表明,该模数转换器能够在2V输入范围内,40兆赫兹采样时钟下实现60.5dB信噪失真比和74.5dB的无杂散动态范围。     

一种用于低功耗流水线模数转换器的新型低电压运算放大器

本文提出一种新型适用于低电压的两级运算放大器。该放大器采用电平平移技术和电流镜镜像技术分别在第一级和第二级实现CLASS-AB偏置,在相同的电流消耗下,有效输入跨导相对传统的两级运放提高了一倍,从而实现了低功耗、大带宽、建立时间短的目标。采用嵌套米勒补偿技术和对称结构的共模反馈电路,运放在动态工作时可以达到很好的稳定性。在1.2伏的电源电压、0.18微米CMOS工艺下,该运放用于12位40兆赫兹采样频率的流水线模数转换器前端采样保持中,仿真结果显示,采样保持电路的无杂散动态范围达到95.7dB,总谐波失真-94.3dB,信噪失真比达到89.5dB,功耗仅为5.8毫瓦。     

14-bit 100 MS/s 121 mW pipelined ADC

本文实现了一款低功耗、小面积的高速高精度流水线型模数转换器,可以作为IP核应用于片上系统中。该模数转换器应用了逐级尺寸递减、运放共享等技术来实现低功耗的设计。采用分离的双输入通道共享的运算放大器输入端,从而实现运放共享带来的级间串扰、记忆效应等非线性影响的消除。同时,该模数转换器中采用了动态预放大比较器的设计来减小比较器的静态功耗以及回踢噪声的影响。本设计在SMIC 0.18μm CMOS工艺下流片,实现面积开销为3.1mm2。在采样频率为100MHz,输入信号为2.4MHz的情况下,实现无杂散动态范围（SFDR）为82.7dB,信号噪声失真比（SNDR）为69.1dB。在输入信道达到100MHz的情况下,实现SFDR和SNDR分别为81.4dB和65.8dB。该模数转换器的供电电压为1.8V,功耗开销为121mW。     

一种采用低阈值技术实现的高速模数转换器

在0.35 μm标准CMOS工艺下实现了一款采用低阈值技术的高速流水线模数转换器。该转换器包括采样保持电路、流水线ADC核、时钟电路和基准电路。相比于传统电路,该模数转换器中采样保持电路的放大器采用了低阈值设计技术。其优势在于,在特定工艺下,通过低阈值器件补偿放大器可实现高增益带宽,提高了模数转换器的速度。同时,设计了一种全新的保护电路,可有效保证电路的正常工作。采用一种独特的偏置电路设计技术,不仅能够优化跨导放大器的增益和带宽,还可以调节MOS器件工作状态。转换器采用4 bit+8×1.5 bit+3 bit的十级流水线架构,实现了14位精度的模数转换功能。在5 V电源100 MHz时钟下,仿真结果表明,SINAD为74.76 dB,SFDR为87.63 dBc,面积为5 mm×5 mm。     

一种采用Replica控制PVT波动不敏感电荷传输电路的10位250MSPS电荷域流水线模数转换器

本文提供了一种低功耗电荷域10位250Msps电荷域流水线模数转换器（ADC）。通过采用基于BBD的电荷域流水线技术实现,使得ADC具有超低功耗;通过采用一种Replica控制PVT波动不敏感BCT电路,在不降低电荷传输速度的条件下抑制了PVT波动敏感性。采用0.18um CMOS工艺,在没有采用共模控制和误差校准技术的条件下,所实现的10位电荷域ADC在250MHz全速采样时对于9.9MHz正弦输入信号转换得到的无杂散动态范围（SFDR）为64.74dB,信噪失真比（SNDR）为56.9dB,有效位数（ENOB）达9.1比特,最大微分线性度（DNL）为 0.5/-0.5 LSB,最大积分线性度（INL）为 0.8/-0.85 LSB,并且在1.8V电源条件下整个电路功耗仅为45mW,整个ADC有源芯片面积为1.2×1.3 mm2。     

1.4伏25毫瓦600兆赫兹采样频率6位0.13微米CMOS折叠内插模数转换器

本文介绍了一个6位600兆采样频率折叠内插模数转换器。该模数转换器采用了级联折叠放大器和输入改进型有源内插放大器。测试结果显示,工作在500兆赫兹采样频率时,输入信号频率10兆赫兹,模数转换器的有效位数和无杂散动态范围分别是5.55位和47.84分贝;输入信号200兆赫兹,模数转换器的ENOB和SFDR分别是4.3位和35.65分贝。工作在600兆赫兹采样频率时,输入信号频率1兆赫兹,模数转换器的有效位数和无杂散动态范围分别是5.48位和43.52分贝;输入信号30.1兆赫兹,模数转换器的ENOB和SFDR分别是4.66位和39.56分贝。该模数转换器工作电压1.4伏,总功耗25毫瓦,采用0.13微米CMOS工艺实现,面积0.17平方毫米。     

一个低功耗的带片上参考电压缓冲器的12位30兆采样率的CMOS流水线模数转换器

介绍了一个在0.13µm 1P8M CMOS工艺下实现的12位30兆采样率流水线模数转换器。提出了一种消除前端采样保持电路的低功耗设计方法。除了第一级之外,带双输入的两级cascode补偿的运算放大器在相邻级间共享以进一步地减小功耗。该模数转换器在5MHz的模拟输入和30.7MHz的采样速率下达到了65.3dB的SNR,75.8dB的SFDR和64.6dB的SNDR。该芯片在1.2V电源电压下消耗33.6mW。FOM达到了0.79pJ/conv step。     

一种带改进开关和使用新型按比例缩小策略的10位120兆的流水线模数转换器

这篇文章介绍了一种精度为10比特,采样率为120兆的双通道流水线模数转换器(ADC)。这个模数转换器利用了体效应来改善开关的导通性能。在版图绘制中应用了一种新型的按比例缩小的策略。基于0.18μm的CMOS工艺,ADC的整个版图面积为2.05x1.83 mm2。在采样频率为120兆,输入信号频率为4.9兆的情况下,无杂散动态范围达到了74.32dB,信号噪音失真比为55.34dB,3伏供电电压下每通道的功耗为220毫瓦。     

一种具有高线性度MOS采样开关的采样保持电路

通过采样保持电路中运放的复用,提出了一种具有高线性度MOS采样开关的模数转换器前端采样保持电路结构。这种结构可以显著降低采样开关导通电阻变化引入的非线性,从而在不增加开关面积和功耗的情况下,实现了高性能的采样保持电路。基于0.13?m的标准CMOS工艺,对提出的采样保持电路进行了仿真。在采样时钟频率为100MHz,输入信号频率1MHz时,仿真结果显示,无杂散动态范围(SFDR)达到了116.6dB,总谐波失真(THD)达到了112.7dB,信号谐波噪声比（SNDR）达到103.7dB,可以满足14比特流水线ADC对采样保持电路的要求。     

一种具有比较器失调后台校准的无采样保持放大器型14位100MS/s流水线模数转换器

本文实现了一种不具有前端采样保持放大器的14位100MS/s的流水线模数转换器。为了提高第一级采样网络的匹配性,本文提出了一种用于降低第一级子模数转换器的后台失调校准电路。后台失调校准电路保证了比较器总失调不超过内建冗余结构的校准范围。所提出的模数转换器采用0.18um CMOS工艺进行流片,面积为12mm2。在1.8V电源电压下,模数转换器功耗为237mW。测量结果显示,在100MHz采样频率、30.1MHz输入频率下,模数转换器的信号与噪声失真比（SNDR）为71dB,无杂散动态范围（SFDR）为85.4dB,最大微分非线性（DNL）为0.22LSB,最大积分非线性（INL）为1.4LSB。     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

GaAsSb/InAlAs PA DHBTs Grown by Production MBE

The epi material growth of GaAsSb based DHBTs with InAlAs emitters are investigated using a 4 × 100mm multi-wafer production Riber 49 MBE reactor fully equipped with real-time in-situ sensors including an absorption band edge spectroscope and an optical-based flux monitor. The state-of-the-art hole mobilities are obtained from 100nm thick carbon-doped GaAsSb. A Sb composition variation of less than ± 0.1 atomic percent across a 4 × 100mm platen configuration has been achieved. The large area InAlAs/GaAsSb/InP DHBT device demonstrates excellent DC characteristics,such as BVCEO＞6V and a DC current gain of 45 at 1kA/cm2 for an emitter size of 50μm × 50μm. The devices have a 40nm thick GaAsSb base with p-doping of 4. 5 × 1019cm-3 . Devices with an emitter size of 4μm × 30μm have a current gain variation less than 2% across the fully processed 100mm wafer. ft and fmax are over 50GHz,with a power efficiency of 50% ,which are comparable to standard power GaAs HBT results. These results demonstrate the potential application of GaAsSb/InP DHBT for power amplifiers and the feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Noise character analysis and the restraint of self-pulsation laser diodes

We calculate the Langevin noise sources of self-pulsation laser diodes, analyze the effects of active region noise and saturable-absorption region noise on the power fluctuation as well as period fluctuation, and propose a novel method to restrain the noise effects. A visible SIMULINK model is established to simulate the system, The results indicate that the effects of noise in absorption region can be ignored; that with the increase of DC injecting current, the noise effects enhance power jitter, and nevertheless, the period jitter is decreased; and that with external sinusoidal current modulating the self-pulsation laser diode, the noise-induced power jitter and period jitter can be suppressed greatly. This work is valuable for clock recovery in all-optical network.