一种新的基于单元扩大的拥挤度驱动的布局算法

描述了一种新的基于单元扩大的拥挤度驱动的布局算法 .这个方法用概率估计模型和星型模型来评价线网的走线 .使用全局优化和划分交替的算法来进行总体布局 .提出了单元的虚拟面积的概念 ,单元的虚拟面积不仅体现了单元的面积 ,而且指出了对布线资源的需求 .单元的虚拟面积可以由单元的扩大策略来得到 .把单元的虚拟面积用到划分过程中 ,从而减小拥挤度 .并且使用了单元移动的策略来进一步减小走线的拥挤 .用来自美国公司的一些例子测试了这个算法 ,结果显示布局的结果在可布性方面有了很大的提高     

硅片键合过程中的接触面积

给出了估计硅片在键合过程中实际接触面积的理论模型.模型描述了硅片表面的凸起分布及其弹性形变对接触面积的影响.对于满足键合条件的硅片表面,荷载压力和表面吸附是促使接触面积增加的主要因素.     

一种改进的VLSI关键面积计算模型和方法

从故障机理上研究了现有的关键面积计算模型 ,改进了其开路 /短路关键面积计算模型的故障核 ,从而得到适用于一般版图图形结构的关键面积计算方法 .这对计算 VL SI关键面积、指导版图优化设计和提高 IC成品率有重要意义 .     

基于功角测量和等面积法则的发电机暂态稳定在线判别研究

基于相量测量单元(PMU)的广域测量系统将电力系统的安全稳定监测提高到了动态水平,其中一个关键功能是发电机功角的直接测量.本文将功角测量和等面积法则相结合,用以快速判别电力系统的暂态稳定.该方法能够在线实时判别电网故障的发生和切除、根据实测功角数据计算加速面积、预测最大可能的减速面积,从而根据加速面积和减速面积的差值来判断暂态稳定性.该方法预测耗时短,可在故障切除后80ms内给出判断结果并提供稳定裕度信息.仿真结果一方面证明了其可行性;另一方面也表明,受PMU本身数据上传速率的影响,加速面积的预测值可能偏小,当加速面积和减速面积非常接近时,应采用其他辅助分析手段协助判别暂态稳定性.     

使用CCD的微小疵点面积测量系统设计

为检测光纤传像器件的疵点面积,提出了一种检测微小疵点面积的算法.首先根据疵点面积大小确定显微物镜放大倍数和十字分化板的精度;用CCD(电荷耦合器件)采集图像,该图像经十字分化板标定后得出单位像素面积.然后采用最大熵法确定图像分割阈值,经边缘检测得到疵点的像素数,从而计算出疵点面积.该系统由软硬件两部分组成,硬件部分卤钨灯的光经积分球后得到漫射光源,使用CCD相机和图像采集卡得到图像,软件部分介绍了图像处理算法及eVision二次开发,并对实验数据进行了误差分析.实验结果证明:该方法准确可靠,精度可达到1×10-10 m2,能够满足疵点面积测量要求.     

不同电镀面积计算方法探讨

电镀铜流程是印制板制造过程中非常重要的一步,孔壁镀铜厚度是影响板件可靠性的重要因素之一,PCB制造厂家和客户都十分重视孔铜的控制.在电镀生产过程中,电流密度和电镀面积是决定孔铜厚度的两个关键参数,通过这两个参数,可以利用法拉第定律来理论计算电镀铜层的厚度.但在实际运用过程中,对于全板电镀使用拼板面积(板件尺寸长x宽)做为电镀面积,而对于图形电镀使用外层线路图形面积(拼板面积减去干膜覆盖面积)做为电镀面积,往往出现实际孔铜厚度与理论计算相差甚远,这是因为没有考虑到板件上孔对电镀面积的影响.板件厚度和孔数量对实际电镀面积影响很大,本文讨论了三种电镀面积的计算方法,确定了最合适的电镀面积计算方法,并在实际生产过程中进行验证.     

LUT尺寸对FPGA面积和延迟影响的理论分析

在分析隔离岛式FPGA结构的基础上,提出了基于LUT的面积和延迟模型,用于分析LUT尺寸对FPGA面积和性能的影响.结果表明利用计算模型得到的最佳LUT尺寸与实验结论一致:4-LUT获得最好的面积有效性,5-LUT获得较好的延迟.     

国外标准关于色彩测量方法的综述

近年来各类多基色显示设备和显示系统推陈出新.全面深入掌握显示设备的工作原理及特性,将有助于更好地发挥其作用,并指导测试.介绍了ICDM、ITU-R BT.1361和中国行业标准SJ/T 11348-2006起草标准中关于色彩测量的方案.色彩测量包括诸基色、补色、灰度、任意颜色的测量,方案由三基色色域面积提出了相对色域面积的概念和测量方法.最后提出以相对色域面积考量显示色彩还原能力.     

扩频测控信号抗干扰性能评价方法研究

在分析有源干扰机理和扩频测控信号处理原理的基础上,提出以基于模糊图的有效面积和一定高度下切割面积评价扩频测控信号固有抗干扰性能的方法.模糊图的有效面积和切割面积越小,则扩频测控信号的固有抗干扰性能越强.仿真示例表明,所提面积指标均可有效反映信号固有抗干扰性能.该方法具有可计算性,可为扩频测控信号的抗干扰性能评价提供方法依据.     

VLSI接触等离子体刻蚀的电终点检测法

本文叙述了等离子体接触刻蚀的精确就地检测法.这种电终点检测法提供了一个直流电流,该电流与总的开口接触面积成正比,而且信嗓比比光学技术高一个数量级.显然,终点检测对于总接触面积小于3吋芯片面积的0.3%的情况是很有用的.对于p_-~+-n和n_-~+-p结来说,使用这种方法的接触电阻和漏电流与湿法腐蚀或干法腐蚀的接触电阻和泄漏电流是相一致的.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.