应用于高速CMOS图像传感器的10比特列并行循环式ADC

This paper presents a high-speed column-parallel cyclic analog-to-digital converter(ADC) for a CMOS image sensor.A correlated double sampling(CDS) circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise(FPN) effectively.One single channel ADC with an area less than 0.02 mm~2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.     

An ultra-low-power area-efficient non-volatile memory in a 0.18 μ m single-poly CMOS process for passive RFID tags

This paper presents an ultra-low-power area-efficient non-volatile memory(NVM) in a 0.18μm singlepoly standard CMOS process for passive radio frequency identification(RFID) tags.In the memory cell,a novel low-power operation method is proposed to realize bi-directional Fowler-Nordheim tunneling during write operation. Furthermore,the cell is designed with PMOS transistors and coupling capacitors to minimize its area.In order to improve its reliability,the cell consists of double floating gates to store the data,and the 1 kbit NVM was implemented in a 0.18μm single-poly standard CMOS process.The area of the memory cell and 1 kbit memory array is 96μm~2 and 0.12 mm~2,respectively.The measured results indicate that the program/erase voltage ranges from 5 to 6 V.The power consumption of the read/write operation is 0.19μW/0.69μW at a read/write rate of (268 kb/s)/(3.0 kb/s).     

一种用于接收机的低功耗自动增益控制环路

This paper proposes a new structure to lower the power consumption of a variable gain amplifier (VGA) and keep the linearity of the VGA unchanged. The structure is used in a high rate amplitude-shift keying (ASK) based IF-stage. It includes an automatic gain control (AGC) loop and ASK demodulator. The AGC mainly consists of six-stage VGAs. The IF-stage is realized in 0.18 μ m CMOS technology. The measurement results show that the power consumption of the whole system is very low. The system consumes 730 μ A while operating at 1.8 V. The minimum ASK signal the system could detect is 0.7 mV (peak to peak amplitude).     

一种面向多标准无线收发器的低功耗宽调谐范围基带滤波器设计

本论文提出了一种面向多标准收发器的具有精确片上调谐电路的低功耗宽调谐范围基带滤波器。设计的滤波器是由三级Active-Gm-RC类型的双二次单元级联组成的六阶巴特沃斯低通滤波器。采用改进的线性化技术来提高低通滤波器的线性度。论文提出了一种新的匹配性能与工艺无关的跨导匹配电路和具有频率补偿的频率调谐电路来增加滤波器的频率响应精度。为了验证设计方法的有效性,采用标准的130nm CMOS工艺对滤波器电路进行流片。测试结果表明设计的低通滤波器带宽调谐范围为0.1MHz-25MHz,频率调谐误差小于2.68%。滤波器在1.2V的电源电压下,功耗为0.52mA到5.25mA,同时取得26.3dBm的带内输入三阶交调点。     

An ultra-low-power RF transceiver for WBANs in medical applications

A 2.4 GHz ultra-low-power RF transceiver with a 900 MHz auxiliary wake-up link for wireless body area networks(WBANs)in medical applications is presented.The RF transceiver with an asymmetric architecture is proposed to achieve high energy efficiency according to the asymmetric communication in WBANs.The transceiver consists of a main receiver(RX)with an ultra-low-power free-running ring oscillator and a high speed main transmitter(TX)with fast lock-in PLL.A passive wake-up receiver(WuRx)for wake-up function with a high power conversion efficiency(PCE)CMOS rectifier is designed to offer the sensor node the capability of work-on-demand with zero standby power.The chip is implemented in a 0.18μm CMOS process.Its core area is 1.6 mm~2. The main RX achieves a sensitivity of-55 dBm at a 100 kbps OOK data rate while consuming just 210μA current from the 1 V power supply.The main TX achieves +3 dBm output power with a 4 Mbps/500 kbps/200 kbps data rate for OOK/4 FSK/2 FSK modulation and dissipates 3.25 mA/6.5 mA/6.5 mA current from a 1.8 V power supply. The minimum detectable RF input energy for the wake-up RX is-15 dBm and the PCE is more than 25%.     

基于0.18μm 标准CMOS工艺的嵌入双精度温度传感器的无源超高频RFID标签芯片

文章提出了一种符合EPC Gen-2协议嵌入双精度温度传感器的无源超高频RFID电子标签芯片。设计了一种采用双精度工作模式的新型温度传感器,它能够在满足传感器精度要求的条件下缩短传感时间和降低标签芯片的功耗。标签芯片集成了一个全MOS管构成的射频整流器和一个单多晶硅栅标准CMOS的非易失性存储器。采用0.18μm标准CMOS工艺集成实现了无源超高频RFID电子标签芯片。芯片面积为1mm2,片上非易失性存储器容量为192bit。芯片被压焊到PCB天线上实现了一个完整的标签。当温度传感器关闭/启动时,电子标签的灵敏度为-10.7dBm/-8.4dBm。电子标签达到的最大读/传感距离为4m/3.1m @2W EIRP。在5℃至15℃（-30℃至50℃）的温度范围内,传感器的误差为-0.6℃/0.5℃(-1.0℃/1.2℃)。在高（低）精度模式下,温度传感器的精度为0.01℃(0.18℃)。     

一种基于标准CMOS工艺的新型单片集成紫外图像传感器

我们提出了一种基于标准CMOS工艺的浮栅紫外图像传感器。传感器单元是由一个非常紧凑的紫外线灵敏器件构成。整个紫外图像传感器有一CMOS像素单元阵列、高压开关、读出电路和数字控制等部分组成。在一0.18μm标准工艺上实现了1个1616的图像传感器芯片。我们对传感器单元和阵列进行了测试,测试结果表明传感器的灵敏度为0.072 V/(mJ/cm2),并且可以获得紫外图像。此紫外图像传感器适合于大规模集成的生物医药和太空探测等领域。     

A low power fast-settling frequency-presetting PLL frequency synthesizer

This work presents the design and implementation of a 2.4 GHz low power fast-settling frequency-presetting PLL frequency synthesizer in the 0.18μm CMOS process.A low power mixed-signal LC VCO,a low power dual mode prescaler and a digital processor with non-volatile memory are developed to greatly reduce the power consumption and the setting time.The digital processor can automatically calibrate the presetting frequency and accurately preset the frequency of the VCO under process variations.The experiment...     

超高频RFID芯片中高灵敏度ASK解调器的设计

为了提高无源超高频(UHF)射频识别(RFID)标签的灵敏度和增大工作距离,设计了一种高灵敏度的ASK解调器。在该解调器的包络检波电路中,采用了开启电压补偿技术,以减小电荷传输管的导通压降;并设计了一种无二极管无电阻的参考电平产生电路。基于0.18μm标准CMOS工艺实现了该解调器,其芯片面积为0.010 mm2,满足第2代第1类UHF RFID通讯协议(EPC C1G2)的要求。测试结果表明,当载波频率为900 MHz、调制深度为80%~100%、数据率为26.7~128 kbit/s时,解调器能够解调信号的能量强度范围为-16~+20 dBm。在工作电压为0.8 V时,其功耗仅为0.56μW。