掺锰硅材料的电流振荡特性

用高温扩散方法制备出补偿Si∶(B,Mn)材料,并研究了这种材料的电流振荡参数与光照和电场之间的关系.结果表明:在一定光照和电场范围内(276～305V/cm),电阻率为104Ω·cm的材料在液氮温度下显示出电流振荡特性;在一定的电场下,电流振荡波形是固定的,不随时间变化;振荡频率随光照强度的增大而线性增大;调制系数随着光强的增强而减弱;振荡的最大值随着光照强度增大而减小,最小值随着光强增大而缓慢增大.     

大气湍流中受限高斯光束的轴向光强分布

利用扩展Huygens-Fresnel原理分析了大气湍流中圆形孔径限制下高斯光束的传播特性,得到了轴上平均光强的解析表达式,运用数值模拟方法计算了不同湍流强度、孔径大小和波长下的轴上平均光强.结果表明,轴上平均光强在近场发生振荡,其振荡幅度随湍流强度增强和发射孔径的增大而降低,振荡的周期随传播距离的增大而增加;在远场随传播距离的增大,振荡逐渐消失,平均光强平滑下降,最后一个平均光强极大值的位置与湍流强度和波长成反比,与发射孔径成正比.     

微波脉冲与带缝非金属腔耦合的数值模拟研究

应用时域有限差分法(FDTD)模拟计算了微波脉冲与带缝非金属腔体的线性耦合过程.在正弦波凋制的高斯脉冲源激励下,分析了耦合场在腔体内的分布情况,总结了相对介电常数、腔壁厚度、孔缝尺寸等因数对耦合特性影响的基本规律.结果表明:在入射电场方向腔体中心轴线上的耦合场基本保持不变,垂直于入射电场截面上耦合场关于截画中心点呈对称分布;耦合进腔体的能量随厚度的增加和介电常数的增大而减小,但介电常数的影响更加明显,且随孔缝面积的增大而增大,面积一定时,随纵横比的增大而增大;孔缝中心处的电场耦合系数峰值随介电常数的增大呈近似线性下降,而腔体中心处呈振荡减小,在相对介电常数为6左右电场时域峰值达到最大;腔体内耦合磁场的变化规律与电场的类似.     

光强对有机小分子太阳电池光伏性能的影响

采用真空蒸镀的方法,制备了ZnPc(40 nm)/C60(20 nm)结构的电池,重点研究了不同光强测试条件下,ZnPc/C60电池光伏性能的变化情况。发现开路电压(Voc)和填充因子(FF)随光强呈现对数式的变化趋势,前者逐渐上升而后者则下降,短路电流与光强的关系为Jsc∝E1.13,电池的功率转换效率(η)随光强稳步上升。拟合计算得到电池的理想因子n=1.93;100 mW/cm2辐照条件下,Rs=25Ω,Rsh=116Ω;分析认为,器件的准费密能级分裂程度随光强增强而增大是导致开路电压增大的原因;而Jsc-E强于正比关系则是C60产生激子对电流有辅助贡献的结果。     

掺氧化镁铌酸锂晶体中高强度近红外飞秒激光脉冲线性电光效应

数值研究了掺氧化镁铌酸锂晶体中高强度近红外飞秒激光脉冲的线性电光效应。研究结果发现,当在垂直于晶体光轴的方向上施加一定外电场使光脉冲实现最强的电光耦合时,输出脉宽在正常色散区随着输入光强的增大而增大;而在较强反常色散区,输出脉宽随着输入光强增大而减小。对中心波长λ0=1.6335μm的光脉冲,线性电光效应可使输出脉宽产生压缩。当输入脉宽T0=5fs和光强I0=20GW/cm2时,最小输出脉宽为输入脉宽T0的0.76倍。而当T0>5fs时,最小输出脉宽小于0.76T0。若在晶体光轴方向上施加另一个电场对光脉冲进行相位调制,则最小输出脉宽的光脉冲中心波长发生蓝移或红移;随着外电场的增大,蓝移或红移量相应增大。     

利用时域太赫兹波谱法的超高电场下砷化镓内能带耦合现象研究

利用时域太赫兹波谱系统,研究了超高电场下砷化镓中的非平衡载流子的动态运动过程.研究发现,当电场小于50 kV/cm时,电子运动所辐射出的太赫兹波信号的最初峰值ΔETHz(对应电子在Γ谷中的加速)随着电场的增加不断增大;当电场大于50 kV/cm时,ΔETHz随着电场的增大逐渐衰减并最终达到饱和.这一实验结果表明,当电场强度大于50 kV/cm时,由砷化镓中的电子的有效加速质量随着电场的增加而显著地增加(在300 kV/cm的情况下电子的有效加速质量约为低电场时的30倍).导致这一结果的原因是在超高电场的情况下砷化镓中的能带会发生强烈的混合.     

CdS半导体非线性吸收中的电场作用

在CdS的室温光学非线性吸收过程中,再外加直流电场,观察到光学非线性吸收随外场增大而增大,非线性出现的光强阈值随外场增大而减小.通过实验判断这一现象来源于电子激子散射.     

聚合物分散液晶透射光散射特性随角度电压的变化

采用聚合物相分离法制备聚合物分散液晶(PDLC)薄膜,通过改变散射角,对散射光强随电压的变化进行了测试。实验结果表明,在角度小于26°时,外加电压为10 V处出现一个散射强度极小值;当角度超过26°时,外加电压为10 V处散射光强最大。在不同的散射角下,散射光强随外加电场的变化趋势有明显差异。散射角在0°~5°角范围内蓝光的光强随外加电压的增加一直增大;在6°~25°范围内,散射光强随外加电压的增大先增大后减小,并且最大波峰时的电压随着角度的增加而减小;当散射角大于26°时,蓝光的光强随着电压的增大而减小。采用单散射理论对实验现象进行了分析和讨论。     

光电双向负阻晶体管的数值模拟与实验研究

光电双向负阻晶体管(PBNRT)是一种新型S型光电负阻器件.本文对它的光电负阻特性进行了数值模拟和实验研究,给出了器件等效电路.PBNRT在光电混合工作模式下具有光控电流开关效应,可通过光照和控制电压两种控制方式改变器件的S型负阻特性.模拟和实验结果均表明:光照强度增大,维持电压基本保持不变,转折电压减小,负阻电压摆幅减小;而增大控制电压,维持电压和转折电压均增大,输出负阻特性曲线右移.上述特点使得PBNRT可望在光电开关、光控振荡和光电探测等方面有很好的应用前景.     

双光子中心对称光折变宽光束调制不稳定性

为了得到稳态条件下1维宽光束在有偏压双光子中心对称光折变晶体中的调制不稳定性的结果,通过空间电荷场的局域性处理和数值模拟的方法,获得了1维调制不稳定性的增长率。结果表明,在入射光束强度一定的情况下,调制不稳定性增长率最大值随外加电场以及空间频率域的增加而增大;在外加电场给定时,调制不稳定性增长率的最大值随入射光强的增大先达到一峰值后又减小。宽光束的调制不稳定性取决于外加电场及入射光束强度与暗辐射的比值。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.