含碳气氛对表面传导电子发射显示器发射性能的影响

采用实验的方法,研究了含碳气氛下表面传导电子发射显示器(SED)的电子发射性能.通过测量和比较普通真空环境与含碳气氛下电子发射的特性参数发现,通入含碳气氛能明显提高电子发射性能,器件电流If和发射电流Ie的值在通入含碳气氛后明显改变,表面传导电子发射效率ρ也明显提高.     

等平面化自对准硅雪崩击穿电子发射阵列器件的设计和研究

本文报道了等平面化自对准硅雪崩击穿电子发射阵列器件的结构设计和工艺过程。该器件的电子发射区域边缘的工艺台阶仅为10nm,其自对准的浅砷注入电流通道区宽度仅为3m。与已报道的其它结构硅雪崩击穿电子发射器件相比较,该器件的电流电压特性曲线有更宽的线性区域和更低的通导电阻。本文也对其电子发射特性作了部分介绍。     

表面活性剂掺杂的聚芴类蓝光器件

用PVK作空穴传输／电子阻挡层．提高了ITO／PEDOT／PVK／PDOF／Ba／Al器件的发光效率，但器件的启亮电压也增加。同PDOF单层器件相比，相同驱动电压下双层器件的电流明显减小而器件的发光效率却提高。在芴均聚物(PEOF)和芴共聚物(PF10T)中掺杂Li—NPTEOS表面活性剂可以提高器件的EL效率，有效地抑制EL光谱红移现象。掺杂浓度在10％～20％(质量分数)，PVK作为电子阻挡层的蓝光器件的EL效率可达1％。掺杂引起的PFO能级的改变降低了空穴注入的势垒高度．使电子和空穴注入趋于平衡以及在电场作用下Li-NPTEOS的偶极取向作用可能是提高量子效率、降低启亮电压和工作电压的根本原因。     

用硅的各向异性腐蚀工艺制备发射硅尖阵列

本文介绍了真空微电子器件场发射阴极硅尖阵列的制备工艺技术。采用硅的各向异性腐蚀工艺和氧化削尖技术制成了形状和发射性能均较好的硅尖阵列，测试结果表明，起始发射电压为５～６Ｖ，发射电流在阳极电压为２０Ｖ时为０．５ｍＡ，反向击穿电压为７５Ｖ。     

980nm大功率垂直腔底发射激光器

报道980nm大功率底发射垂直腔面发射激光器的结构、研制及器件的阈值电流、输出功率和光谱特性．在室温(24℃)下，5A连续电流工作时，出光孔径400μm的器件激射波长为984．1nm，输出功率达到1．42W，是目前所能见到报道中最高的．研究了出光孔径600μm的器件在连续工作时，激射波长、光谱半高宽随注入电流的变化以及在重复频率100Hz，脉冲宽度50—1000μs条件下的输出功率、效率与注入电流的关系．     

等平面化自对准硅雪崩击穿电子发射阵列器件的设计和研究

本文报道了等平面化自对准硅雪崩击穿电子限射阵列器件的结构设计和工艺过程。该器件的电子发射区域边缘的工艺台阶仅为１０ｎｍ，其自对准的浅砷注入电流通道区宽度仅为３μｍ。与已报道的其它结构硅雪崩击穿电子发射器件相比较，该器件的电流电压特性曲线有更宽的线性区域和更低的通导电阻。本文也对其电子发射特性作了部分介绍。     

有机电致发光的效率

描述了评价有机电致发光性能的重要指标－－发光效率问题,从发光机制考虑,一般常用外量子效率和内量子效率来评价。外量子效率是有机电致发光器件输出光子数与注入电子数之比;内量子效率是产生在器件内部的光子数与液入电子数之比,对于光子能否输出到器件外部无关紧要。评价器件性能还有一些其他效率评价方法,如能量效率,功率效率等,特别是外功率效率（1m/W),电流效率（cd/A)也常常用于表征有机电致发光性能,但它们与发光光谱的视觉灵敏度有关,对紫外外辐射器件不适用,另外,利用三重态激子发射可以提高EL器件效率,理论上可达100％,器件结构及材料对器件外量子效率影响至关重要。     

硅PN结反向击穿冷阴极研究

本文报导了硅PN结反向击穿冷阴极电子发射源的研究结果。尽管器件制造中采用的大部分工艺与标准的微电子工艺相容,但为了形成和测量超薄PN结,还引入了一些特殊方法。这些方法包括:超低能离子注入,由氧化和腐蚀构成的结区减薄工艺,快速热退火和一些对工艺进行监测的新方法。本文给出了电子发射特性,最大发射电流达到150nA,它对应的发射效率为8×10~(-6),这个数值已达到国际水平。     

一种航天器有效载荷新型高功率微波开关

为了抑制空间高功率器件中微放电击穿,本文提出了一种表面多孔结构。通过在器件表面构造该多孔结构,实现对二次发射电子的禁锢,从而减小器件表面二次电子发射系数,提高微放电阈值。通过模拟分析不同金属材料表面的二次电子发射特性,结合波方程和电子动力学理论建立电磁粒子模拟算法,实现不同微观表面微波器件的数值模拟。使用偏置电流法测量不同条件下金属的二次电子发射数据。模拟计算一定功率电平下典型微波开关微放电的物理图像。测量给出不同银表面处理下的二次电子发射特性,并且模拟给出微放电阈值。模拟结果与实验结果吻合良好,证明了表面多孔结构对微放电的有效抑制。     

直径155mm钪酸盐阴极组件研制

热阴极不仅应用在微波电真空器件中,还可应用到高能电子线性加速器中,这种电子加速器通常需要具有上千安培发射电流的电子源.本文主要介绍了某加速器上的直径155mm钪酸盐热阴极组件的研究过程和初步测试结果.模拟分析和实验结果表明,该热阴极组件具有较好的结构稳定性;热子功率可达3200W,在1100℃时能提供2690A的脉冲发射电流,电流密度达到14.3A/cm2;同时单脉冲和三脉冲测试都表现出良好的电流稳定性和一致性.     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.