对数跳跃加法器的静态CMOS实现

介绍了一种32位对数跳跃加法器结构.该结构采用ELM超前进位加法器代替进位跳跃结构中的组内串行加法器,同ELM相比节约了30%的硬件开销.面向该算法,重点对关键单元进行了晶体管级的电路设计.其中的进位结合结构利用Ling算法,采用支路线或电路结构对伪进位产生逻辑进行优化;求和逻辑的设计利用传输管结构,用一级逻辑门实现"与-民或"功能;1.0μm CMOS工世实现的32位对数跳跃加法器面积为0.62mm2,采用1μm和0.25μm 工世参数的关键路径延迟分别为6ns和0.8ns,在100MHz下功耗分别为23和5.2mW.     

对数跳跃加法器的算法及结构设计

本文介绍一种新型加法器结构——对数跳跃加法器,该结构结合进位跳跃加法器和树形超前进位加法器算法,将跳跃进位分组内的进位链改成二叉树形超前进位结构,组内的路径延迟同操作数长度呈对数关系,因而结合了传统进位跳跃结构面积小、功耗低的特点和ELM树形CLA在速度方面的优势.在结构设计中应用Ling's算法设计进位结合结构,在不增加关键路径延迟的前提下,将初始进位嵌入到进位链.32位对数跳跃加法器的最大扇出为5,关键路径为8级逻辑门延迟,结构规整,易于集成.spectre电路仿真结果表明,在0.25μmCMOS工艺下,32位加法器的关键路径延迟为760ps,100MHz工作频率下功耗为5.2mW.     

基于并行前缀结构的十进制加法器设计

针对硬件实现BCD码十进制加法需要处理无效码的问题,设计了一种基于并行前缀结构的十进制加法器。该十进制加法器依据预先加6,配合二进制加法求中间和,然后再减6修正的算法,并将减6修正步骤整合到重新设计的减6修正进位选择加法器中,充分利用并行前缀结构大幅提高了电路运算的并行度。采用Verilog HDL对加法器进行实现并利用Design Compiler进行综合,得到设计的32位,64位,128位的十进制加法器的延时分别为0.56 ns,0.61 ns,0.71 ns,面积分别为1 310 μm2,2 681 μm2,5 485 μm2。     

一种适合VLSI实现的快速加法器

本文提出一种规整结构超前进位加法器,其加法时间与位数的对数成比例;而且其结构规整、逻辑简单、互连容易。SPICE模拟表明,采用2μm CMOS工艺的16位加法器最坏情况延时为5.4ns,并具有位数加倍延时仅增加1.2ns的扩展特性。它可以方便地用全定制或半定制等VLSI设计方法实现。     

64位超前进位对数加法器的设计与优化

设计一个应用于高性能微处理器的快速64位超前进位对数加法器.通过分析超前进位对数加法器原理,提出了改进四进制Kogge-Stone树算法的64位超前进位对数加法器结构,并结合使用多米诺动态逻辑、时钟延迟多米诺逻辑和传输门逻辑等技术来设计和优化电路.该加法器采用SMIC 0.18 μm CMOS工艺实现,在最坏情况下完成一次加法运算时间为486.1 ps,与相同工艺和相同电路结构采用静态CMOS实现相比,大大减少了加法器各级门的延迟时间,取得良好的电路性能.     

基于逻辑结构的超前进位加法器的设计

通过对计算机加法器的研究,从门电路标准延迟模型出发,在对超前进位加法器逻辑公式研究的基础上,在主要考虑速度的前提下,给出了超前进位加法器的逻辑电路的设计方案。主要对16位、32位加法器的逻辑电路进行分析设计,通过计算加法器的延迟时间来对比超前进位加法器与传统串行进位链加法器,得出超前进位算法在实际电路中使加法器的运算速度达到最优。     

一种32位高速浮点乘法器设计

文章介绍一种32位浮点乘法器软IP的设计,其部分积缩减部分采用修正Booth算法,部分积加法采用4-2压缩树结构,最终carry、sum形式部分积采用进位选择加法器完成,乘法器可以进行32位浮点数或24位定点数的乘法运算。采用VerilogHDLRTL级描述,采用SMIC0.18μm工艺库进行综合,门级仿真结果表明乘法器延时小于4.05ns。     

一种使用Advance MS的全定制加法器加速设计

采用一种加速全定制IC设计的方法,完成了基于CSMC(华润上华)0.5 μm工艺的32位加法器的设计.使用动态差分多米诺逻辑,实现了基于Brent-Kung树结构的超前进位加法器;采用Mentor Graphics Advance MS仿真软件,加速进行Spice网表的仿真和版图后仿.仿真结果验证了Spice网表的正确性,得出加法器在版图后仿的关键路径延时为4.62 ns,整个设计流程可以应用于其他一些重要核心单元的全定制设计.     

32位高速浮点乘法器优化设计

设计了一种用于频率为200 MHz的32位浮点数字信号处理器(DSP)中的高速乘法器.采用修正Booth算法与Wallace压缩树结合结构完成Carry Sum形式的部分积压缩,再由超前进位加法器求得乘积.对乘法器中的4-2压缩器进行了优化设计,压缩单元完成部分积压缩的时间仅为1.47 ns,乘法器延迟时间为3.5 ns.     

一种自定时的前置进位加法器设计

从时序控制的角度出发,研究提高加法器性能的方法。在研究前置进位加法器的算法和结构后,又对多米诺电路的时钟控制技术进行深入分析。结合前置进位结构和自定时时钟控制．设计了一个32b多米诺加法器。该加法器能有效地提高时钟使用率。在TSMC0．18um工艺下,加法器的最大延时为970ps,约为相同工艺下13倍FO4的延时。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.