一种低电压恒定跨导轨到轨运算放大器的设计

设计了一种低电压恒定跨导的轨到轨运算放大器,作为误差放大器用在BUCK型DC-DC上实现对输出电压的调节。该运算放大器采用两级结构,输入级采用互补差分对的结构,实现了轨到轨电压的输入,并且利用2倍电流镜技术实现了跨导的恒定;输出级采用AB类放大器的结构,提高了输出电压摆幅和效率,实现了轨到轨电压的输出。该电路基于CSMC 0.25μm EN BCDMOS工艺进行设计,仿真结果表明:电源电压为2.8 V时,在输出端负载电容为160 pF、负载电阻为10 kΩ的情况下,增益为124 dB,单位增益带宽积为5.76 MHz,相位裕度为59.9℃,输入跨导为5.2 mΩ~(-1),共模抑制比为123 dB,输入共模信号范围为0～2.8V,输出电压摆幅为0～2.8 V。     

一种0.8V 2.4μA CMOS全差分放大器

基于0.25μm标准CMOS工艺,采用0.8V开关电容共模反馈电路技术和PMOS衬底驱动技术提出了一种新型0.8V 2.4μA全差分放大器.在0.8V单电源电压下,全差分放大器的直流开环增益为63.8dB,相位裕度为60度,单位增益带宽为7.4MHz,输出电压范围为18～791mV,其中新型模拟开关的输入/输出电压范围为0～800mV,整个放大器的电源电流为2.4μA,版图面积为410×360μm2.     

21~28GHz波段平衡式放大器

采用OMM IC的0.2μm PHEM T工艺设计了工作在21~28 GH z的平衡式放大器。正交耦合电桥采用兰格电桥。兰格电桥和平衡式放大器的在片测试结果和仿真结果基本吻合,平衡式放大器在21~28 GH z的增益为18~20 dB,输入和输出回波损耗小于-20 dB,在26 GH z处的输出1 dB压缩点功率为21 dBm。     

径向双压电叠堆执行器建模与实验研究

该文设计了一种径向双压电叠堆执行器,可以实现单压电或双压电叠堆驱动,在不增加轴向长度的基础上实现输出位移的放大。针对该执行器,建立了基于Bouc-Wen的压电动态迟滞力模型作为执行器整体动力学模型力的输入;在MATLAB/Simulink中,基于最小二乘法对迟滞力模型中的参数进行辨识。仿真与实验结果表明,在峰-峰值140 V、直流偏置70 V的激励信号下,两根长为18 mm的压电叠堆在复合驱动下能输出约55μm的位移,实现了执行器的位移放大输出且在高频下无明显衰减;所建立的执行器动态迟滞模型很好地描述了单压电或双压电叠堆在1～600 Hz驱动频率下的电压-位移滞环曲线。在驱动频率为600 Hz时,双压电复合驱动的模型最大均方根误差为1.13μm,最大相对误差为6.1%,为大位移、高精度的执行器控制提供了基础。     

一种高共模抑制比恒定跨导运算放大器

介绍了一种基于电平位移技术实现恒定跨导的CMOS Rail-to-Rail运算放大器。该电路克服了一般运算放大器输入共模范围小的特点,输入级引入了电平位移电路,使运放在各种输入共模电压下的跨导几乎恒定。在此基础上,设计了一种具有高共模抑制比的恒定跨导运算放大器。该运算放大器具有Rail-to-Rail的输入、输出能力。整个电路采用Hynix 0.5μm CMOS工艺进行设计。     

毫米波单片平衡放大器

研制了一款毫米波(26～40 GHz)平衡式单片放大器芯片。放大器基于0. 15μm GaAs pHEMT工艺,实现了毫米波全频段(26～40 GHz)增益放大。采用Lange桥平衡结构,使放大器较于单边放大器有更好的输入输出驻波比,更大的1 dB增益压缩输出功率。设计时结合pHEM T晶体管小信号和大信号模型,采用自偏和RLC并联负反馈结构,在减小芯片面积的同时提高了电路的稳定性。放大器芯片尺寸仅1. 6 mm×1. 6 mm,在工作频率26～40 GHz内,测试结果表明:输入、输出驻波比小于1. 5,增益在11 dB附近,平坦度在±0. 5 dB,1 dB增益压缩输出功率大于11 dBm。测试结果验证了设计的正确性。     

采用高介电常数网络的6～12GHz中功率GaAsFET放大器的设计

在高介电常数的衬底材料上使用分布传输线技术,成功地研究和制作了4800μm(四个1200μm单胞)GaAs场效应晶体管放大器的输入和输出网络。本文叙述了输入和输出网络的设计和制作以及一个完成的6～12GHz4W放大器的性能。     

5Gb/s单片集成GaAs MSM/PHEMT 850nm光接收机前端

采用0.5μm GaAs PHEMT工艺研制出了一种单片集成850nm光接收机前端,它包括金属-半导体-金属(MSM)光探测器和分布放大器.探测器光敏面积为50μm×50μm,电容为0.17pF,4V偏压下的暗电流小于17nA.分布放大器-3dB带宽接近20GHz,跨阻增益约46dBΩ;在50MHz～16GHz范围内,输入、输出电压驻波比均小于2;噪声系数在3.03～6.5 dB之间.光接收机前端在输入2.5和5Gb/s非归零伪随机二进制序列调制的光信号下,得到较为清晰的输出眼图.     

5Gb/s单片集成GaAs MSM/PHEMT 850nm光接收机前端

采用0.5μm GaAs PHEMT工艺研制出了一种单片集成850nm光接收机前端,它包括金属-半导体-金属(MSM)光探测器和分布放大器.探测器光敏面积为50μm×50μm,电容为0.17pF,4V偏压下的暗电流小于17nA.分布放大器-3dB带宽接近20GHz,跨阻增益约46dBΩ;在50MHz～16GHz范围内,输入、输出电压驻波比均小于2;噪声系数在3.03～6.5 dB之间.光接收机前端在输入2.5和5Gb/s非归零伪随机二进制序列调制的光信号下,得到较为清晰的输出眼图.     

10Gb/s GaAs PHEMT高增益光接收机前置放大器

基于南京电子器件研究所0.5μm GaAs PHEMT工艺,研制了一种高增益级联式光接收机前置放大器，作为前级的跨阻抗放大器的-3dB带宽为10GHz,小信号增益为9dB； 作为后级的分布式放大器的-3dB带宽接近20GHz,小信号增益为12dB； 级联前置放大器小信号增益达21.3dB,跨阻增益为55.3dBΩ,在输入10Gb/s非归零伪随机二进制序列下,放大器输出眼图清晰、对称、信噪比优于跨阻放大器,分布放大器不能校正的输入波形失真也得到显著改善。     

Technology innovation and process integrations for sub-100nm gate patterning

This paper presents a brief overview of the Applied Centura(R)DPS(R)system,configured with silicon etch DPS Ⅱ chamber, with emphasis on discussing tuning capability for CD uniformity control. It also presents the studies of etch process chemistry and film integration impact for an overall successful gate patterning development. Discussions will focus on resolutions to key issues, such as CD uniformity, line-edge roughness, and multilayer film etching integration.     

White organic light-emitting devices based on fac tris（2- phenylpyridine） iridium sensitized 5,6,11,12-tetraphenylnap -hthacene

We have fabricated the white organic light-emitting devices （WOLEDs） based on 4,4＇ -bis（2,2 -diphenyl vinyl）-1,1＇ - biphenyl （DPVBi） and phosphorescence sensitized 5,6,11,12,-tetraphenylnaphthacene （rubrene）. The device structure is ITO/2T-NATA （20 nm）/NPBX （20 nm）/CBP： x%Ir（ppy）3：0.5% rubrene （8 nm）/NPBX （5 nm）/DPVBi （30 nm）/Alq（30 nm）/LiF（0.5 nm）/A1. In the devices, DPVBi acts as a blue light-emitting layer, the rubrene is sensitized by a phosphorescent material, fac tris （2-phenylpyridine） iridium [Ir（ppy）3], acts as a yellow light-emitting layer, and N,N＇ -bis- （1-naphthyl）- N,N＇ -diphenyl -1, 1＇ -biphenyl-4,4＇ -diamine （NPBX） acts as a hole transporting and exciton blocker layer, respectively. When the concentration of Ir （PPY）3 is 6wt%, the maximum luminance is 24960 cd/m^2 at an applied voltage of 15 V, and the maximum luminous efficiency is 5.17 cd/A at an applied voltage of 8 V.     

Complete approach to automatic identification and subpixel center location for ellipse feature

To meet the need of automatic image features extraction with high precision in visual inspection, a complete approach to automatic identification and sub-pixel center location for similar-ellipse feature is proposed. In the method, the feature area is identified automatically based on the edge attribute, and the sub-pixel center location is accomplished with the leastsquare algorithm. It shows that the method is valid, practical, and has high precision by experiment. Meanwhile this method can meet the need of instrumentation of visual inspection because of easy realization and without man-machine interaction.     

小角度扩展相关性近似算法分析

本论文提出一种在多天线MIMO信道相关性建模中小角度扩展近似理论算法,并应用于分析MIMO系统性能。分析中分别对三种不同角能量分布情况下的空间相关性研发快速近似计算法,并同时提出双模(Bi-Modal)角能量分布情况下的近似运算。通过分析这些新方法的近似效率,可以得到计算简单、复杂度低、而且符合实际的MIMO相关信道矩阵,对系统级的快速高效计算法的研究和系统级的评估以及误差分析具有重要的意义。     

Curved crystal spectrometer for the measurement of X-ray lines from laser-produced plasmas

In order to diagnose the laser-produced plasmas, a focusing curved crystal spectrometer has been developed for measuring the X-ray lines radiated from a laser-produced plasmas. The design is based on the fact that the ray emitted from a source located at one focus of an ellipse will converge on the other focus by the reflection of the elliptical surface. The focal length and the eccentricity of the ellipse are 1350 mm and 0.9586, respectively. The spectrometer can be used to measure the X- ray lines in the wavelength range of 0.2-0.37 nm, and a LiF crystal （200） （2d = 0.4027 nm） is used as dispersive element covering Bragg angle from 30° to 67.5°. The spectrometer was tested on Shengnang- Ⅱ which can deliver laser energy of 60-80 J/pulse and the laser wavelength is 0.35 μm. Photographs of spectra including the 1 s2p ^1P1-1s^2 ^1S0 resonance line（w）, the 1s2p ^3P2-1s^2 1S0 magnetic quadrupole line（x）, the 1s2p ^3P1-1 s^2 ^1S0 intercombination lines（y）, the 1 s2p ^3S~1-1 s^2 ^1S0 forbidden line（z） in helium-like Ti Ⅹ Ⅺ and the 1 s2s2p ^2P3/2-1 s622s ^2S1/2 line（q） in lithium-like Ti Ⅹ Ⅹhave been recorded with a X-ray CCD camera. The experimental result shows that the wavelength resolution（λ/△ 2） is above 1000 and the elliptical crystal spectrometer is suitable for X-ray spectroscopy.     

Preparation and Characterization of TaN ALD Precursors

High purity organic-tantalum precursors for thin film ALD TaN were synthesized and characterized.Vapor pressure and thermal stability of these precursors were studied.From the vapor pressure analysis,it was found that TBTEMT has a higher vapor pressure than any other published liquid TaN precursor,including TBTDET,TAITMATA,and IPTDET.Thermal stability of the alkyl groups on the precursors was investigated using a 1H NMR technique.The results indicated that the tertbutylimino group is the most stable group on TBTDET and TBTEMT as compared to the dialkylamido groups.Thermal stability of TaN precursors decreased in the following order:TBTDET ＞ PDMAT ＞ TBTEMT.In conclusion,precursor vapor pressure and thermal stability were tuned by making slight variations in the ligand sphere around the metal center.     

A Versatile Mixed-Signal Pin Approach for Cost-Effective Test of Automotive ICs

Integrated circuits (ICs) intended for increasingly sophisticated automotive applications bring unique test demands. Advanced ICs for applications such as highly integrated automatic braking system (ABS) and airbag controllers combine high voltage digital channels, significant VI demands and precise timing capability. Along with continued missioncritical reliability concerns, the trend toward higher voltage operation and increased device integration requires specialized test capabilities able to extend across the wide operating ranges found in automotive applications. Among these capabilities, automotive test requirements increasingly dictate a need for a cost-effective versatile mixed-signal pin electronics with very high data rates reaching up to 50MHz with a voltage swing of-2 V to +28 V.     

Electronic Structure of Semiconductor Nanocrystals

This paper reviews our recent development of the use of the large-scale pseudopotential method to calculate the electronic structure of semiconductor nanocrystals, such as quantum dots and wires, which often contain tens of thousands of atoms. The calculated size-dependent exciton energies and absorption spectra of quantum dots and wires are in good agreement with experiments. We show that the electronic structure of a nanocrystal can be tuned not only by its size,but also by its shape. Finally,we show that defect properties in quantum dots can be significantly different from those in bulk semiconductors.     

Critical Stage Rule-Based Real Time Dispatch（RTD）System in Highly-Mixed-Products （HMP） FAB

An improving utilization and efficiency of critical equipments in semiconductor wafer fabrication facilities are concerned. Semiconductor manufacturing FAB is one of the most complicated and cost sensitive environments. A good dispatching tool will make big difference in equipment utilization and FAB output as a whole. The equipment in this paper is In-Line DUV Scanner. There are many factors impacting utilization and output on this equipment group. In HMP environment one of the issues is changing of reticule in this area and idle counts due to load unbalance between equipments. Here we'll introduce a rule-based RTD system which aiming at decreasing the number of recipe change and idle counts among a group of scanner equipment in a high-mixed-products FAB.     

Optical vibration and deviation measurement of rotating machine parts

It is of interest to get appropriate information about the dynamic behaviour of rotating machinery parts in service. This paper presents an approach of optical vibration and deviation measurement of such parts. Essential of this method is an image derotator combined with a high speed camera or a laser doppler vibrometer （LDV）.