快速热退火对MBE生长的InGaNAs材料结构的影响

从系统自由能角度，阐明了MBE生长的InGaNAs材料在高温热退火过程中材料内部的结构变化. 在热退火时，In-Ga互扩散和N-As互扩散引起spinodal分解，N原子趋向于与In结合形成In-N键，使InGaNAs材料的带隙增加，从而引起PL谱峰值的蓝移.     

16信道0.35μm CMOS/VCSEL光发射模块

研究了垂直腔面发射激光器(VCSEL)及其列阵器件的光谱特性、调制特性、高频特性及与微电子电路的兼容性,将1×16的VCSEL与CMOS专用集成电路进行多芯片组装(MCM),混合集成为16信道VCSEL光发射功能模块.测试过程中,功能模块的光电特性及其均匀性良好,测量的-3dB频带宽度大于2GHz.     

多量子阱空间光调制器二维列阵

用MBE技术生长GaAs／AlGaAs多量子阱材料，研制出8×8独立寻址反射型空间光调制器列阵，对列阵的光反射谱、光电流谱、电场调制特性及电学特性进行了全面的测试，并对列阵的均匀性进行了分析．     

GaAs/GaAlAs多量子阱自电光效应光学双稳态

采用国产分子束外延系统生长的GaAs/GaAlAs多量子阱材料,成功地制备出室温自电光效应(Self Electrooptic Effect)光学双稳态器件(SEED).报道了这种器件在对称工作(S-SEED)和非对称工作时的光学双稳态特性.     

半导体双稳态激光器在光注入下的实验研究

本文报道了InGaAsP/InP 双区共腔脊形波导双稳激光器在外光注入下产生光-光双稳特性及光-光放大的实验结果,给出了器件在直流及脉冲工作时的光-光双稳特性,并对结果进行了初步分析.     

Effects of Growth Conditions on Optical Properties of GaInNAs/GaAs Quantum Well Grown by Molecular Beam Epitaxy

During the process of molecular beam epitaxy employing a DC plasma as N source,the effects of the growth temperature, growth rate and As4 pressure on the optical properties of GaInNAs Quantum Well(QW) are similar to those of InGaAs QW with the same In contents.In the range of 400 to 470℃, elevating growth temperature is beneficial to the improvement in the photoluminescence (PL) peak intensity of GaInNAs QW, but obviously broadens the fullwidth at half maximum PL peak. The improvement of optical properties and the reduction of N incorporation have been observed by increasing the growth rate. As4 pressure mainly affects the optical properties of GaInNAs QW rather than N incorporation does.     

Multiple Quantum Well SEED Arrays for Flip-Chip Bonding Optoelectronic Smart Pixels

The investigation on GaAs/AlGaAs multiple quantum well Self Electro-optic Effect Device (SEED) arrays for flip-chip bonding optoelectronic smart pixels has been reported. In order to increase the absorption of the intrinsic region, the number of quantum well periods is defined as 90 pairs. The GaAs/AlGaAs multiple quantum well devices are designed for 850nm operation. The measurement results under applied biases show the good optoelectronic characteristics of elements in SEED arrays.     

低阈值GaAs/GaAlAs PNPN负阻激光器

一种PNPN型异质结负阻激光器业已研制成功,它的具体结构是n·GaAs/N·Ga_(1-x)Al_xAs/p·GaAs/p·Ga_(1-y)Al_yAs/P·GaAs/n·GaAs/P·Ga_(1-z)Al_zAs;其中,x=0.2～0.3,y≤0.20,z=0.1。本文研究了这种激光器的工作原理和制备工艺,分析了存在异质结构时器件的电导通机理,测量了器件的某些电参数及激射特性。器件的转折电压V_s为15～20V,维持电压V_H约为1.5V,维持电流I_H约为10～100mA。激射阈电流密度最低可达2500A/cm~2。将激光器置于简单的张弛振荡线路中能够较容易地实现自振激射。     

量子阱半导体激光器调制特性和噪声的电路模拟

给出一种量子阱半导体激光器（QWLD）小信号等效电路模型,可以作为含有QWLD系统计算机辅助设计的模型。模型包括QWLD的高速调制特性和噪声,对QWLD的调制特性和噪声进行了模拟,并对比了已发表的模拟和实验结果。