提高成品率的VLSI互连线线宽优化

金属互连线层的设计对VLSI成品率有着重要影响 .研究了制造缺陷与互连线层成品率的关系 ,通过关键面积概念说明了在有制造缺陷影响的情况下 ,互连线线宽参数对成品率的影响 .提出了一种基于线宽调整以期降低互连线缺陷关键面积、从而提高成品率的优化模型和算法 ,并通过 4× 4移位寄存器版图单元的线宽优化实例说明了这种互连线宽优化方法能有效提高成品率 .优化实例表明 ,线宽调整能够引起VLSI的开路和短路关键面积发生变化 .在设计规则容许范围内 ,根据实际版图的关键面积特点对互连线线宽进行优化 ,可以降低芯片对制造缺陷的敏感程度 ,从而提高制造成品率     

电路成品率极大化的多目标优化设计的研究与实现

以集成通用运算放大器ＸＤ１５３１和海燕ＣＳ５４Ｅ－３－Ｒ型彩电遥控器电路为例，给出了电路多目标最优化设计的策略和方法，该方法可对其它多目标进行优化的同时兼顾对电路成品率极大化的要求，较好地解决了含成品率极大的多目标优化设计问题，最后给出了以ＳＰＩＣＥ２Ｇ５软件为基础电路成品率最佳逼近的多目标优化系统（ＥＭＯＣＡＤＳ）的设计方法。     

MQ编码算法优化及高速VLSI结构设计与实现

传统的JPEG2000MQ编码器串行编码效率低下,同时现有的多上下文并行编码的MQ编码器占用资源过大.本文对MQ编码算法中的运算流程,索引值和概率估计值的求解函数,条件交换和重归一化算法等四个方面进行了优化,减弱了上下文之间的依赖性,简化了条件交换和重归一化算法的复杂度.依据该算法,本文提出了一种高速的MQ编码器VLSI结构,实验结果表明,本文提出的MQ编码器VLSI结构能够工作在532.91MHz,吞吐率为532.91 Msymbols/sec,相比Dyer提出的Brute force with modified结构,工作频率提高1倍,吞吐量提高近27%,且面积仅为其四分之一.     

X 波段氮化镓合成固态放大器

Based on a self-developed A1GaN/GaN HEMT with 2.5 mm gate width technology on a SiC substrate, an X-band GaN combined solid-state power amplifier module is fabricated. The module consists of an AIGaN/GaN HEMT, Wilkinson power couplers, DC-bias circuit and microstrip line. For each amplifier, we use a bipolar DC power source. Special RC networks at the input and output and a resistor between the DC power source and the gate of the transistor at the input are used for cancellation of self-oscillation and crosstalk of low-frequency of each amplifier. At the same time, branches of length 3λ/4 for Wilkinson power couplers are designed for the elimination of self-oscillation of the two amplifiers. Microstrip stub lines are used for input matching and output matching. Under Vds = 27 V, Vgs = -4.0 V, CW operating conditions at 8 GHz, the amplifier module exhibits a line gain of 5.6 dB with power added efficiency of 23.4%, and output power of 41.46 dBm （14 W）, and the power gain compression is 3 dB. Between 8 and 8.5 GHz, the variation of output power is less than 1.5 dB.     

Effect of a high temperature AlN buffer layer grown by initially alternating supply of ammonia on AIGaN/GaN heterostuctures

The effect of a high temperature AlN buffer layer grown by the initially alternating supply of ammonia （IASA） method on AlGaN/GaN heterostructures was studied. The use of AlN by the IASA method can effectively increase the crystalline quality and surface morphology of GaN. The mobility and concentration of 2DEG of AlGaN/GaN heterostuctures was also ameliorated.     

用MOCVD在r面蓝宝石衬底上生长的a面GaN的独特电学性质研究

Nonpolar （1120） a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane （1102） sapphire substrate. The structural and electrical properties of the a-plane GaN films are investigated by high-resolution X-ray diffraction （HRXRD）, atomic force microscopy （AFM） and van der Pauw Hall measurement. It is found that the Hall voltage shows more anisotropy than that of the c-plane samples; furthermore, the mobility changes with the degree of the van der Pauw square diagonal to the c direction, which shows significant electrical anisotropy. Further research indicates that electron mobility is strongly influenced by edge dislocations.     

^（60）Co γ-rays irradiation effect in DC performance of AlGaN/GaN high electron mobility transistors

Unpassivated/passivated AlGaN/GaN high electron mobility transistors （HEMTs） were exposed to 1.25 MeV 60Co γ-rays at a dose of 1 Mrad（Si）. The saturation drain current of the unpassivated devices decreased by 15% at 1 Mrad γ-dose, and the maximal transconductance decreased by 9.1% under the same condition; more- over, either forward or reverse gate bias current was significantly increased, while the threshold voltage is relatively unaffected. By sharp contrast, the passivated devices showed scarcely any change in saturation drain current and maximal transconductance at the same γ dose. Based on the differences between the passivated HEMTs and un- passivated HEMTs, adding the C–V measurement results, the obviously parameter degradation of the unpassivated AlGaN/GaN HEMTs is believed to be caused by the creation of electronegative surface state charges in sourcegate spacer and gate–drain spacer at the low dose （1 Mrad）. These results reveal that the passivation is effective in reducing the effects of surface state charges induced by the 60Co γ-rays irradiation, so the passivation is an effective reinforced approach.     

Surface morphology of [110] a-plane GaN growth by MOCVD on [1■02] r-plane sapphire

Nonpolar a-plane [110] GaN has been grown on r-plane [1■02] sapphire by MOCVD, and investigated by high resolution X-ray diffraction and atomic force microscopy. As opposed to the c-direction, this particular orientation is non-polar, and it avoids polarization charge, the associated screening charge and the consequent band bending. Both low-temperature GaN buffer and high-temperature AlN buffer are used for a-plane GaN growth on r-plane sapphire, and the triangular pits and pleat morphology come forth with different buffers, the possible reasons for which are discussed. The triangular and pleat direction are also investigated. A novel modulate buffer is used for a-plane GaN growth on r-plane sapphire, and with this technique, the crystal quality has been greatly improved.     

60Co-γ射线辐射对AlGaN/GaN HEMT器件直流特性的影响

采用1.25Mev 60Co γ射线辐射源对钝化前后的AlGaN/GaN HEMT器件进行了1Mrad(Si)的总剂量辐射,实验发现：1Mrad总剂量辐射后未钝化器件的饱和漏电流和最大跨导分别下降了15%和9.1%,而且正向和反向栅电流明显增加,但是阈值电压几乎没有发生变化。相反的,同样的累积剂量下,钝化器件的饱和漏电流和最大跨导却基本没变。通过对钝化前后器件的不同辐射反应以及C-V测试的分析表明,栅-源和栅-漏间隔区辐射感生表面态负电荷的产生是低剂量下AlGaN/GaN HEMT器件电特性退化的主要原因,同时也说明钝化可以有效地抑制60Co γ辐射感生表面态电荷,它是一种有效的加固手段。     

间歇供氨高温AlN缓冲层对AlGaN/GaN异质结的影响

研究了以间歇供氨的方法直接高温生长的氮化铝为缓冲层的AlGaN/GaN材料,高温氮化铝的应用可以有效的提高晶体质量和表面形貌,并且二维电子气的浓度和迁移率也得到改善。