一种8-b 180KSPS的带有新颖的时域比较器且有效位数7.97的差分逐次逼近模数转换器

This paper presents a differential successive approximation register analog-to-digital converter (SAR ADC) with a novel time-domain comparator design for wireless sensor networks. The prototype chip has been implemented in the UMC 0.18-μ m 1P6M CMOS process. The proposed ADC achieves a peak ENOB of 7.98 at an input frequency of 39.7 kHz and sampling rate of 180 kHz. With the Nyquist input frequency, 68.49-dB SFDR, 7.97-ENOB is achieved. A simple quadrate layout is adopted to ease the routing complexity of the common-centroid symmetry layout. The ADC maintains a maximum differential nonlinearity of less than 0.08 LSB and integral nonlinearity less than 0.34 LSB by this type of layout.     

一种采用PVT不敏感电荷传输电路的27mW 10位125MSPS 电荷域流水线模数转换器

A low power 10-bit 125-MSPS charge-domain(CD) pipelined analog-to-digital converter(ADC) based on MOS bucket-brigade devices(BBDs) is presented.A PVT insensitive boosted charge transfer(BCT) that is able to reject the charge error induced by PVT variations is proposed.With the proposed BCT,the common mode charge control circuit can be eliminated in the CD pipelined ADC and the system complexity is reduced remarkably.The prototype ADC based on the proposed BCT is realized in a 0.18μm CMOS process,with power consumption of only 27 mW at 1.8-V supply and active die area of 1.04 mm~2.The prototype ADC achieves a spurious free dynamic range(SFDR) of 67.7 dB,a signal-to-noise ratio(SNDR) of 57.3 dB,and an effective number of bits(ENOB) of 9.0 for a 3.79 MHz input at full sampling rate.The measured differential nonlinearity(DNL) and integral nonlinearity (INL) are +0.5/-0.3 LSB and +0.7/-0.55 LSB,respectively.     

A 1.4-V 25-mW 600-MS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS

A 600-MSample/s 6-bit folding and interpolating analog-to-digital converter(ADC) is presented.This ADC with single track-and-hold(T/H) circuits is based on cascaded folding amplifiers and input-connection-improved active interpolating amplifiers.The prototype ADC achieves 5.55 bits of the effective number of bits(ENOB) and 47.84 dB of the spurious free dynamic range(SFDR) at 10-MHz input and 4.3 bit of ENOB and 35.65 dB of SFDR at 200-MHz input with a 500 MS/s sampling rate;it achieves 5.48 bit of ENOB a...     

应用于CMOS图像传感器中带有失调电压消除功能的电容比值非相关十位循环式模数转换器

A 10-bit ratio-independent switch-capacitor（SC） cyclic analog-to-digital converter（ADC） with offset cancelingforaCMOSimagesensorispresented.TheproposedADCcompletesanN-bitconversionin1.5N clock cycles with one operational amplifier. Combining ratio-independent and polarity swapping techniques, the conversioncharacteristicoftheproposedcyclicADCisinherentlyinsensitivebothtocapacitorratioandtoamplifieroffset voltage. Therefore, the circuit can be realized in a small die area and it is suitable to serve as the column-parallel ADC in CMOS image sensors. A prototype ADC is fabricated in 0.18- m one-poly four-metal CMOS technology.The measured results indicate that the ADC has a signal-to-noise and distortion ratio（SNDR） of 53.6 dB and a DNL of C0：12/0：14 LSB at a conversion rate of 600 kS/s. The standard deviation of the offset variation of the ADC is reduced from 2.5 LSB to 0.5 LSB. Its power dissipation is 250 W with a 1.8 V supply, and its area is0.030.8 mm2.     

用于流水线ADC的频率自适应可编程MDAC电路

A programmable high precision multiplying DAC （MDAC） is proposed. The MDAC incorporates a frequency-current converter （FCC） to adjust the power versus sampling rate and a programmable operational am- plifier （POTA） to achieve the tradeoff between resolution and power of the MDAC, which makes the MDAC suitable for a 12 bit SHA-less pipelined ADC. The prototype of the proposed pipelined ADC is implemented in an SMIC CMOS 0.18 μm 1P6M process. Experimental results demonstrate that power of the proposed ADC varies from 15.4 mW （10 MHz） to 63 mW （100 MHz） while maintaining an SNDR of 60.5 to 63 dB at all sampling rates. The differential nonlinearity and integral nonlinearity without any calibration are no more than 2.2/-1 LSB and 1.6/-1.9 LSB, respectively.     

A 4 GS/s 4 bit ADC with 3.8 GHz analog bandwidth in GaAs HBT technology

An ultra-wideband 4 GS/s 4 bit analog-to-digital converter(ADC)which is fabricated in 2-level interconnect, 1.4μm InGaP/GaAs HBT technology is presented.The ADC has a-3 dB analog bandwidth of 3.8 GHz and an effective resolution bandwidth(ERBW)of 2.6 GHz.The ADC adopts folding-interpolating architecture to minimize its size and complexity.A novel bit synchronization circuit is used in the coarse quantizer to eliminate the glitch codes of the ADC.The measurement results show that the chip achieves larger than 3.4 ENOBs with an input frequency band of DC-2.6 GHz and larger than 3.0 ENOBs within DC-4GHz at 4 GS/s.It has 3.49 ENOBs when increasing input power by 4 dB at 6.001 GHz of input.That indicates that the ADC has the ability of sampling signals from 1st to 3rd Nyquist zones(DC-6 GHz).The measured DNL and INL are both less than±0.15 LSB. The ADC consumes power of 1.98 W and occupies a total area of 1.45×1.45 mm~2.     

一种带有混合平均式分布采样电路的低功耗CMOS全折叠型模数转换器

This paper describes an 8-bit 125 MHz low-power CMOS fully-folding analog-to-digital converter （ADC） A novel mixed-averaging distributed T/H circuit is proposed to improve the accuracy. Folding circuits are not only used in the fine converter but also in the coarse one and in the bit synchronization block to reduce the number of comparators for low power. This ADC is implemented in 0.5μm CMOS technology and occupies a die area of 2 × 1.5 mm^2. The measured differential nonlinearity and integral nonlinearity are 0.6 LSB/-0.8 LSB and 0.9 LSB/-1.2 LSB, respectively. The ADC exhibits 44.3 dB of signal-to-noise plus distortion ratio and 53.5 dB of spurious-free dynamic range for 1 MHz input sine-wave. The power dissipation is 138 mW at a sampling rate of 125 MHz at a 5 V supply.     

A 14-bit wide temperature range differential SAR ADC with an on-chip multi-segment BGR

A 14-bit low power self-timed differential successive approximation(SAR) ADC with an on-chip multisegment bandgap reference(BGR) is described.An on-chip multi-segment BGR,which has a temperature coefficient of 1.3 ppm/℃and a thermal drift of about 100μV over the temperature range of -40 to 120℃is implemented to provide a high precision reference voltage for the SAR ADC.The Gray code form is utilized instead of binary form mode control to reduce substrate noise and enhance the linearity of the whole system.Self-timed bit-cycling is adopted to enhance the time efficiency.The 14-bit ADC was fabricated in a TSMC 0.13μm CMOS process. With the on-chip BGR,the SAR ADC achieves an SNDR of 81.2 dB(13.2 ENOB) and an SFDR of 85.2 dB with a conversion rate of 2 MS/s at room temperature and can keep an ENOB of more than 12 bits at a conversion rate of 2 MS/s over the temperature range from -40 to 120℃.     

一种基于时域比较器高SFDR的6-bit 20-MS/s 逐次逼近模数转换器

This paper presents a 6-bit 20-MS/s high spurious-free dynamic range(SFDR) and low power successive approximation register analog to digital converter(SAR ADC) for the radio-frequency(RF) transceiver frontend, especially for wireless sensor network(WSN) applications.This ADC adopts the modified common-centroid symmetry layout and the successive approximation register reset circuit to improve the linearity and dynamic range. Prototyped in a 0.18-μm 1P6M CMOS technology,the ADC performs a peak SFDR of 55.32 dB and effective number of bits(ENOB) of 5.1 bit for 10 MS/s.At the sample rate of 20 MS/s and the Nyquist input frequency,the 47.39-dB SFDR and 4.6-ENOB are achieved.The differential nonlinearity(DNL) is less than 0.83 LSB and the integral nonlinearity(INL) is less than 0.82 LSB.The experimental results indicate that this SAR ADC consumes a total of 522μW power and occupies 0.98 mm~2.     

A power-efficient 12-bit analog-to-digital converter with a novel constant-resistance CMOS input sampling switch

Apower-efficient 12-bit40-MS/spipelineanalog-to-digitalconverter（ADC）implementedina0.13 μm CMOS technology is presented. A novel CMOS bootstrapping switch, which offers a constant on-resistance over the entire input signal range, is used at the sample-and-hold front-end to enhance the dynamic performance of the pipelined ADC. By implementing with 2.5-bit-per-stage and a simplified amplifier sharing architecture between two successive pipeline stages, a very competitive power consumption and small die area can be achieved. Meanwhile, the substrate-biasing-effect attenuated T-type switches are introduced to reduce the crosstalk between the two op- amp sharing successive stages. Moreover, a two-stage gain boosted recycling folded cascode （RFC） amplifier with hybrid frequency compensation is developed to further reduce the power consumption and maintain the ADC＇s performance simultaneously. The measured results imply that the ADC achieves a spurious-free dynamic range （SFDR） of 75.7 dB and a signal-to-noise-plus-distortion ratio （SNDR） of 62.74 dB with a 4.3 MHz input signal; the SNDR maintains over 58.25 dB for input signals up to 19.3MHz. The measured differential nonlinearity （DNL） and integral nonlinearity （INL） are -0.43 to ＋0.48 LSB and -1.62 to ＋ 1.89 LSB respectively. The prototype ADC consumes 28.4 mW under a 1.2-V nominal power supply and 40 MHz sampling rate, transferring to a figure- of-merit （FOM） of 0.63 pJ per conversion-step.     

A 0.18μm CMOS fluorescent detector system for bio-sensing application

A CMOS fluorescent detector system for biological experiment is presented. This system integrates a CMOS compatible photodiode, a capacitive trans-impedance amplifier （CTIA）, and a 12 bit pipelined analog-to- digital converter （ADC）, and is implemented in a 0.18μm standard CMOS process. Some special techniques, such as a ＂contact imaging＂ detecting method, pseudo-differential architecture, dummy photodiodes, and a T-type reset switch, are adopted to achieve low-level sensing application. Experiment results show that the Nwell/Psub photodiode with CTIA pixel achieves a sensitivity of 0.1 A/W at 515 nm and a dark current of 300 fA with 300 mV reverse biased voltage. The maximum differential and integral nonlinearity of the designed ADC are 0.8 LSB and 3 LSB, respectively. With an integrating time of 50 ms, this system is sensitive to the fluorescence emitted by the fluorescein solution with concentration as low as 20 ng/mL and can generate 7 fA photocurrent. This chip occupies 3 mm^2 and consumes 37 mW.     

An 8 bit 1 MS/s SAR ADC with 7.72-ENOB

This paper presents a low power 8-bit 1 MS/s SAR ADC with 7.72-bit ENOB. Without an op-amp, an improved segmented capacitor DAC is proposed to reduce the capacitance and the chip area. A dynamic latch comparator with output offset voltage storage technology is used to improve the precision. Adding an extra positive feedback in the latch is to increase the speed. What is more, two pairs of CMOS switches are utilized to eliminate the kickback noise introduced by the latch. The proposed SAR ADC was fabricated in SMIC 0.18 μm CMOS technology. The measured results show that this design achieves an SFDR of 61.8 dB and an ENOB of 7.72 bits, and it consumes 67.5 μ W with the FOM of 312 fJ/conversion-step at 1 MS/s sample under 1.8 V power supply.     

An 11-bit ENOB,accuracy-programmable,and non-calibrating time-mode SAR ADC

A 10 or 12 bit programmable successive approximation register(SAR) ADC incorporating improved time-domain comparator for bridge stress monitoring systems is presented.Techniques for improving the accuracy of time-domain comparator are presented.The application of these approaches is illustrated using results from an experimental 10 or 12 bit programmable SAR ADC.Prototyped in a 0.18-m,6M1P CMOS process,the ADC,at 12 bit,100 kS/s,achieves a Nyquist signal-to-noise-plus-distortion ratio(SNDR) of 68 dB(11 ENOB),a spurious free dynamic range(SFDR) of 77.48 dB,while dissipating 558 W from a 1.8-V supply.Its differential nonlinearity(DNL) and integral nonlinearity(INL) are 0.2/-0.74 LSB and C1.27/-0.97 LSB,respectively.     

应用于生物医疗的0.6-V 8.3-ENOB 异步时序逐次逼近型模数转换器

A microwatt asynchronous successive approximation register （SAR） analog-to-digital converter （ADC） is presented. The supply voltage of the SAR ADC is decreased to 0.6 V to fit the low voltage and low power require- ments of biomedical systems. The tail capacitor of the DAC array is reused for least significant bit conversion to decrease the total DAC capacitance thus reducing the power. Asynchronous control logic avoids the high frequency clock generator and further reduces the power consumption. The prototype ADC is fabricated with a standard 0.18 μm CMOS technology. Experimental results show that it achieves an ENOB of 8.3 bit at a 300-kS/s sampling rate. Very low power consumption of 3.04 μW is achieved, resulting in a figure of merit of 32 fJ/conv.-step.     

应用于人工关节无线监控系统的低功耗循环式ADC设计

This paper presents a low power cyclic analog-to-digital convertor （ADC） design for a wireless monitoring system for orthopedic implants. A two-stage cyclic structure including a single to differential converter, two multiplying DAC functional blocks （MDACs） and some comparators is adopted, which brings moderate speed and moderate resolution with low power consumption. The MDAC is implemented with the common switched capacitor method. The 1.5-bit stage greatly simplifies the design of the comparator. The operational amplifier is carefully op- timized both in schematic and layout for low power and offset. The prototype chip has been fabricated in a United Microelectronics Corporation （UMC） 0.18-μm 1P6M CMOS process. The core of the ADC occupies only 0.12 mm2. With a 304.7-Hz input and 4-kHz sampling rate, the measured peak SNDR and SFDR are 47.1 dB and 57.8 dBc respectively and its DNL and INL are 0.27 LSB and 0.3 LSB, respectively. The power consumption of the ADC is only 12.5 μW in normal working mode and less than 150 nW in sleep mode.     

应用于高速CMOS图像传感器的10比特列并行循环式ADC

This paper presents a high-speed column-parallel cyclic analog-to-digital converter(ADC) for a CMOS image sensor.A correlated double sampling(CDS) circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise(FPN) effectively.One single channel ADC with an area less than 0.02 mm~2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.     

A 10-bit 80-MS/s opamp-sharing pipelined ADC with a switch-embedded dual-input MDAC

A 10-bit 80-MS/s opamp-sharing pipelined ADC is implemented in a 0.18-μm CMOS.An opampsharing MDAC with a switch-embedded dual-input opamp is proposed to eliminate the non-resetting and successive-stage crosstalk problems observed in the conventional opamp-sharing technique.The ADC achieves a peak SNDR of 60.1 dB(ENOB = 9.69 bits) and a peak SFDR of 76 dB,while maintaining more than 9.6 ENOB for the full Nyquist input bandwidth.The core area of the ADC is 1.1 mm~2 and the chip consumes 28 mW with a 1.8 V power supply.     

A cryogenic SAR ADC for infrared readout circuits

A cryogenic successive approximation register(SAR) analog to digital converter(ADC) is presented. It has been designed to operate in cryogenic infrared readout systems as they are cooled from room temperature to their final cryogenic operation temperature.In order to preserve the circuit’s performance over this wide temperature range,a temperature-compensated time-based comparator architecture is used in the ADC,which provides a steady performance with ultra low power for extreme temperature(from room temperature down to 77 K) operation.The converter implemented in a standard 0.35μm CMOS process exhibits 0.64 LSB maximum differential nonlinearity (DNL) and 0.59 LSB maximum integral nonlinearity(INL).It achieves 9.3 bit effective number of bits(ENOB) with 200 kS/s sampling rate at 77 K,dissipating 0.23 mW under 3.3 V supply voltage and occupies 0.8×0.3 mm~2.     

采用电压复位技术的像素级模数转换器

This paper presents a 50 Hz 15-bit analog-to-digital converter(ADC) for pixel-level implementation in CMOS image sensors.The ADC is based on charge packets counting and adopts a voltage reset technique to inject charge packets.The core circuit for charge/pulse conversion is specially optimized for low power,low noise and small area.An experimental chip with ten pixel-level ADCs has been fabricated and tested for verification.The measurement result shows a standard deviation of 1.8 LSB for full-scale output.The ADC has an area of 4545 m2 and consumes less than 2 W in a standard 1P-6M 0.18 m CMOS process.     

Current mode ADC design in a 0.5-μm CMOS process

This paper presents a pipelined current mode analog to digital converter（ADC） designed in a 0.5-μm CMOS process.Adopting the global and local bias scheme,the number of interconnect signal lines is reduced numerously,and the ADC exhibits the advantages of scalability and portability.Without using linear capacitance,this ADC can be implemented in a standard digital CMOS process;thus,it is suitable for applications in the system on one chip（SoC） design as an analogue IP.Simulations show that the proposed current mode ADC can operate in a wide supply range from 3 to 7 V and a wide quantization range from ±64 to ±256 μA.Adopting the histogram testing method,the ADC was tested in a 3.3 V supply voltage/±64 μA quantization range and a 5 V supply voltage/±256 μA quantization range,respectively.The results reveal that this ADC achieves a spurious free dynamic range of 61.46 dB,DNL/INL are-0.005 to ＋0.027 LSB/-0.1 to ＋0.2 LSB,respectively,under a 5 V supply voltage with a digital error correction technique.