Synthesis of In2S3 thin films by spray pyrolysis from precursors with different [S]/[In] ratios

Indium sulfide （InzS3） thin films were prepared by chemical spray pyrolysis technique from solutions with different [S]/[In] ratios on glass substrates at a constant temperature of 250 ~C. Thin films were characterized by X-ray diffraction （XRD）, scanning electron microscopy （SEM）, atomic force microscopy （AFM）, energy disper- sive X-ray spectroscopy （EDS）, Raman spectroscopy and optical transmittance spectroscopy. All samples exhibit a polycrystalline structure with a preferential orientation along （0, 0, 12）. A good stoichiometry was attained for all samples. The morphology of thin film surfaces, as seen by SEM, was dense and no cracks or pinholes were ob- served. Raman spectroscopy analysis shows active modes belonging to j3-1naS3 phase. The optical transmittance in the visible range is higher than 60% and the band gap energy slightly increases with the sulfur to indium ratio, attaining a value of 2.63 eV for [S]/[In] ： 4.5.     

Ranking Potential Reply-Providers in Community Question Answering System

Community Question Answering （CQA） websites have greatly facilitated users＇ lives, with an increasing number of people seeking help and exchanging ideas on the Internet. This newlymerged community features two characteristics： social relations and an ask-reply mechanism. As users＇ behaviours and social statuses play a more important role in CQA services than traditional answer retrieving websites, researchers＇ concerns have shifted from the need to passively find existing answers to actively seeking potential reply providers that may give answers in the near future. We analyse datasets derived from an online CQA system named ＂Quora＂, and observed that compared with traditional question answering services, users tend to contribute replies rather than questions for help in the CQA system. Inspired by the findings, we seek ways to evaluate the users＇ ability to offer prompt and reliable help, taking into account activity, authority and social reputation char- acteristics. We propose a hybrid method that is based on a Question-User network and social network using optimised PageRank algorithm. Experimental results show the efficiency of the proposed method for ranking potential answer-providers.     

一个全差分可编程的多通道神经信号记录芯片

A multi-channel,fully differential programmable chip for neural recording application is presented.The integrated circuit incorporates eight neural recording amplifiers with tunable bandwidth and gain,eight 4thorder Bessel switch capacitor filters,an 8-to-1 analog time-division multiplexer,a fully differential successive approximation register analog-to-digital converter(SAR ADC),and a serial peripheral interface for communication.The neural recording amplifier presents a programmable gain from 53 dB to 68 dB,a tunable low cut-off frequency from 0.1 Hz to 300 Hz,and 3.77 μVrms input-referred noise over a 5 kHz bandwidth.The SAR ADC digitizes signals at maximum sampling rate of 20 kS/s per channel and achieves an ENOB of 7.4.The integrated circuit is designed and fabricated in 0.18-μm CMOS mix-signal process.We successfully performed a multi-channel in-vivo recording experiment from a rat cortex using the neural recording chip.     

A power-efficient 12-bit analog-to-digital converter with a novel constant-resistance CMOS input sampling switch

Apower-efficient 12-bit40-MS/spipelineanalog-to-digitalconverter（ADC）implementedina0.13 μm CMOS technology is presented. A novel CMOS bootstrapping switch, which offers a constant on-resistance over the entire input signal range, is used at the sample-and-hold front-end to enhance the dynamic performance of the pipelined ADC. By implementing with 2.5-bit-per-stage and a simplified amplifier sharing architecture between two successive pipeline stages, a very competitive power consumption and small die area can be achieved. Meanwhile, the substrate-biasing-effect attenuated T-type switches are introduced to reduce the crosstalk between the two op- amp sharing successive stages. Moreover, a two-stage gain boosted recycling folded cascode （RFC） amplifier with hybrid frequency compensation is developed to further reduce the power consumption and maintain the ADC＇s performance simultaneously. The measured results imply that the ADC achieves a spurious-free dynamic range （SFDR） of 75.7 dB and a signal-to-noise-plus-distortion ratio （SNDR） of 62.74 dB with a 4.3 MHz input signal; the SNDR maintains over 58.25 dB for input signals up to 19.3MHz. The measured differential nonlinearity （DNL） and integral nonlinearity （INL） are -0.43 to ＋0.48 LSB and -1.62 to ＋ 1.89 LSB respectively. The prototype ADC consumes 28.4 mW under a 1.2-V nominal power supply and 40 MHz sampling rate, transferring to a figure- of-merit （FOM） of 0.63 pJ per conversion-step.     

一种应用于GNSS接收机的低噪声和低杂散频率综合器

A low phase noise and low spur phase locked loop （PLL） frequency synthesizer for use in global navigation satellite system （GNSS） receivers is proposed. To get a low spur, the symmetrical structure of the phase frequency detector （PFD） produces four control signals, which can reach the charge pump （CP） simultaneously, and an improved CP is realized to minimize the charge sharing and the charge injection and make the current matched. Additionally, the delay is controllable owing to the programmable PFD, so the dead zone of the CP can be eliminated. The output frequency of the VCO can be adjusted continuously and precisely by using a programmable LC-TANK. The phase noise of the VCO is lowered by using appropriate MOS sizes. The proposed PLL frequency synthesizer is fabricated in a 0.18 μm mixed-signal CMOS process. The measured phase noise at 1 MHz offset from the center frequency is -127.65 dBc/Hz and the reference spur is -73.58 dBc.     

Low power high gain gain-controlled LNA and mixer for GNSS receivers Wei Binbin(魏斌斌)1, Jiang Jinguang(江金光)1,2,3*

A low power high gain gain-controlled LNA ＋ mixer for GNSS receivers is reported. The high gain LNA is realized with a current source load. Its gain-controlled ability is achieved using a programmable bias circuit. Taking advantage of the high gain LNA, a high noise figure passive mixer is adopted. With the passive mixer, low power consumption and high voltage gain of the LNA ＋ mixer are achieved. To fully investigate the performance of this circuit, comparisons between a conventional LNA ＋ mixer, a previous low power LNA ＋ mixer, and the proposed LNA ＋ mixer are presented. The circuit is implemented in 0.18 #m mixed-signal CMOS technology. A 3.8 dB noise figure, an overall 45 dB converge gain and a 10 dB controlled gain range of the two stages are measured. The chip occupies 0.24 mm2 and consumes 2 mA current under 1.8 V supply.     

一种应用于GPS接收机的高线性度SiGe HBT低噪声放大器

A high linearity 1.575 GHz SiGe：HBT low noise amplifier （LNA） for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of ＋7.8 dBm and an input third-order intercept point of ＋1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.     

用于无采保流水线ADC的高速低功耗低失调动态比较器

A novel fully differential high speed high resolution low offset CMOS dynamic comparator has been implemented in the SMIC 0.18 μm process used for a sample-and-hold amplifier （SHA）-less pipelined analog-to-digital converters （ADC）. Based on the analysis and optimization between delay time and offset, an enhanced reset architecture with transmission gate was introduced to speed up the comparison and reset procedure. Four inputs with two cross coupled differential pairs, reconstituted bias circuit for tail current transistor and common centroid layouts make the comparator more robust against mismatch and process variations. The simulation results demonstrate that the proposed design achieves 1 mV sensitivity at 2.2 GHz sampling rate with a power consumption of 510 μW, while the mean offset voltage is equal to 10.244 mV.     

用于U波段移动数字电视的宽带大动态范围高线性度射频前端

A wideband large dynamic range and high linearity U-band RF front-end for mobile DTV is introduced,and includes a noise-cancelling low-noise amplifier(LNA),an RF programmable gain amplifier(RFPGA) and a current communicating passive mixer.The noise/distortion cancelling structure and RC post-distortion compensation are employed to improve the linearity of the LNA.An RFPGA with five stages provides large dynamic range and fine gain resolution.A simple resistor voltage network in the passive mixer decreases the gate bias voltage of the mixing transistor,and optimum linearity and symmetrical mixing is obtained at the same time.The RF front-end is implemented in a 0.25 μm CMOS process.Tests show that it achieves an ⅡP3(third-order intercept point) of –17 dBm,a conversion gain of 39 dB,and a noise figure of 5.8 dB.The RFPGA achieves a dynamic range of –36.2 to 23.5 dB with a resolution of 0.32 dB.     

一种基于低中频接收相位选择发射结构的工作在2.4GHz面向WPAN应用的超低功耗收发机

This paper presents a 2.4 GHz CMOS transceiver for the wireless personal area network （WPAN） inte- grated in 0.18/zm CMOS technology. This transceiver adopts a low-IF receiver, a MUX based transmitter and a fast-setting fractional-N frequency synthesizer. For achieving low cost and low power consumption, an inductor- less receiver front-end, an adaptive analog baseband, a low power MUX and a current-reused phase-locked loop （PLL） have been proposed in this work. Measured results show that the receiver achieves-8 dBrn of lIP3 and 31 dB of image rejection. The transmitter delivers 0 dBm output power at a data rate of 2 Mbps. The current consumption is 7.2 mA in the receiving mode and 6.9 mA in the transmitting mode, respectively.     

一种电流复用共栅低噪声放大器的低功耗433/915-MHz射频前端的设计

This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier(LNA),current-reuse V –I converter,active double balanced mixer and transimpedance amplifier for short range device(SRD) applications.With the proposed current-reuse LNA,the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices.The RF front-end was fabricated in 0.18 μm RFCMOS process and occupies a silicon area of just 0.11 mm2.Operating in 433 MHz band,the measurement results show the RF front-end achieves a conversion gain of 29.7 dB,a double side band noise figure of 9.7 dB,an input referenced third intercept point of –24.9 dBm with only 1.44 mA power consumption from 1.8 V supply.Compared to other reported front-ends,it has an advantage in power consumption.     

一种应用于无线局域网具有3.01-3.82 GHz频率范围和6.29%调谐增益变化的CMOS LC压控振荡器

A wideband low-phase-noise LC voltage-controlled oscillator （VCO） with low VCO gain （Kvco） vari- ation for WLAN fractional-N frequency synthesizer application is proposed and designed on a 0.13-μm CMOS process. In order to achieve a low Kvco variation, an extra switched varactor array was added to the LC tank with the conventional switched capacitor array. Based on the proposed switched varactor array compensation technique, the measured Kvco is 43 MHz/V with only 6.29% variation across the entire tuning range. The proposed VCO provides a tuning range of 23.7% from 3.01 to 3.82 GHz, while consuming 9 mA of quiescent current from a 2.3 V supply. The VCO shows a low phase noise of-121.94 dBc/Hz at 1 MHz offset, from the 3.6 GHz carrier.     

纳米锥SiGe-SOI光波导与光纤的耦合分析

Based on a submicrometer-sized SiGe-SOI waveguide, the coupling loss mechanism is analyzed between the submicrometer-sized SiGe-SOI waveguide and the fiber. The main sources of coupling loss are analyzed, and the mismatch loss of the mode field is the mainly lost during connection between the submicrometer-sized waveguide and the fiber. In order to reduce the mismatch loss of the mode field, the structure ofa nanotaper SiGeSOI waveguide with a nanometer-sized tip is adopted. By reducing the waveguide dimensions to increase the mode field size, coupling loss could be reduced between the waveguide and the fiber. Different mode field dimensions ofnanotaper SiGe-SOI waveguides and fiber are quantitatively analyzed, and the quantitative relationship between nanotaper SiGe-SOI waveguide dimensions and mode field dimensions are obtained. Finally, nanotaper SiGe-SOI waveguides are made, and the test and analysis have been done. The final experimental results accord well with the theoretical analysis. When the waveguide width is 0.5 μm, the minimum coupling loss of the SiGe-SOI waveguide is 0.56 dB/facet, and also the correctness of the design method and theoretical analysis are verified.     

用于流水线ADC的频率自适应可编程MDAC电路

A programmable high precision multiplying DAC （MDAC） is proposed. The MDAC incorporates a frequency-current converter （FCC） to adjust the power versus sampling rate and a programmable operational am- plifier （POTA） to achieve the tradeoff between resolution and power of the MDAC, which makes the MDAC suitable for a 12 bit SHA-less pipelined ADC. The prototype of the proposed pipelined ADC is implemented in an SMIC CMOS 0.18 μm 1P6M process. Experimental results demonstrate that power of the proposed ADC varies from 15.4 mW （10 MHz） to 63 mW （100 MHz） while maintaining an SNDR of 60.5 to 63 dB at all sampling rates. The differential nonlinearity and integral nonlinearity without any calibration are no more than 2.2/-1 LSB and 1.6/-1.9 LSB, respectively.     

A 130 nm CMOS low-power SAR ADC for wide-band communication systems

This paper presents a low power 9-bit 80 MS/s SAR ADC with comparator-sharing technique in 130 nm CMOS process. Compared to the conventional SAR ADC, the sampling phase is removed to reach the full efficiency of the comparator. Thus the conversion rate increases by about 20% and its sampling time is relaxed. The design does not use any static components to achieve a widely scalable conversion rate with a constant FOM. The floorplan of the capacitor network is custom-designed to suppress the gain mismatch between the two DACs. The ＇set-and- down＇ switching procedure and a novel binary-search error compensation scheme are utilized to further speed up the SA bit-cycling operation. A very fast logic controller is proposed with a delay time of only 90 ps. At 1.2 V supply and 80 MS/s the ADC achieves an SNDR of 51.4 dB and consumes 1.86 mW, resulting in an FOM of 76.6 fJ/conversion-step. The ADC core occupies an active area of only 0.089 mm2.     

A novel SOI high-voltage SJ-pLDMOS based on self-adaptive charge balance

A new SOl self-balance （SB） super-junction （S J） pLDMOS with a self-adaptive charge （SAC） layer and its physical model are presented. The SB is an effective way to realize charges balance （CB）. The substrate-assisted depletion （SAD） effect of the lateral SJ is eliminated by the self-adaptive inversion electrons provided by the SAC. At the same time, high concentration dynamic self-adaptive electrons effectively enhance the electric field （EI） of the dielectric buried layer and increase breakdown voltage （BV）. E1 = 600 V/μm and BV =- 237 V are obtained by 3D simulation on a 0.375-μm-thick dielectric layer and a 2.5-μm-thick top silicon layer. The optimized structure realizes the specific on resistance （Ron,sp） of 0.01319Ω·cm2, FOM （FOM = BV2/R p） of 4.26 MW/cm2 under a 11 μm length （Ld） drift region.     

基于一种新架构的4GH 32比特的直接数字频率合成器

This paper presents a novel direct digital frequency synthesizer(DDFS)architecture based on nonlinear DAC coarse quantization and the ROM-based piecewise approximation method,which has the advantages of high speed,low power and low hardware resources.By subdividing the sinusoid into a collection of phase segments,the same initial value of each segment is realized by a nonlinear DAC.The ROM is decomposed with a coarse ROM and fine ROM using the piecewise approximation method.Then,the coarse ROM stores the offsets between the initial value of the common segment and the initial value of each line in the same segment.Meanwhile,the fine ROM stores the differences between the line values and the initial value of each line.A ROM compression ratio of32 can be achieved in the case of 11 bit phase and 9 bit amplitude.Based on the above method,a prototype chip was fabricated using 1.4 m GaAs HBT technology.The measurement shows an average spurious-free dynamic range(SFDR)of 45 dBc,with the worst SFDR only 40.07 dBc at a 4.0 GHz clock.The chip area is 4.6 3.7 mm2and it consumes 7 W from a–4.9 V power supply.     

90nm CMOS工艺低功耗20GHz比较器设计

A low power 20 GHz CMOS dynamic latched regeneration comparator for ultra-high-speed, low-power analog-to-digital converters （ADCs） is proposed. The time constant in both the tracking and regeneration phases of the latch are analyzed based on the small signal model. A dynamic source-common logic （SCL） topology is adopted in the master-slave latch to increase the tracking and regeneration speeds. Implemented in 90 nm CMOS technology, this comparator only occupies a die area of 65 × 150 μm^2 with a power dissipation of 14 mW from a 1.2 V power supply. The measurement results show that the comparator can work up to 20 GHz. Operating with an input frequency of 1 GHz, the circuit can oversample up to 20 Giga-sampling-per-second （GSps） with 5 bits resolution; while operating at Nyquist, the comparator can sample up to 20 GSps with 4 bits resolution. The comparator has been successfully used in a 20 GSps flash ADC and the circuit can be also used in other high speed applications.     

应用于2.4GHz无线传感网的超低功耗射频接收前端设计

This paper presents the design of an ultralow power receiver front-end designed for a wireless sensor network （WSN） in a 0.18 μm CMOS process. The author designs two front-ends working in the saturation region and the subthreshold region respectively. The front-ends contain a two-stage cross-coupling cascaded common-gate （CG） LNA and a quadrature Gilbert IQ mixer. The measured conversion gain is variable with high gain at 24 dB and low gain at 7 dB for the saturation one, and high gain at 22 dB and low gain at 5 dB for the subthreshold one. The noise figure （NF） at high gain mode is 5.1 dB and 6.3 dB for each. The input 1 dB compression point （IPldB） at low gain mode is about -6 dBm and -3 dBm for each. The front-ends consume about 2.1 mA current from 1.8 V power supply for the saturation one and 1.3 mA current for the subthreshold one. The measured results show that, comparing with the power consumption saving, it is worth making sacrifices on the performance for using the subthreshold technology.