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 共查询到19条相似文献,搜索用时 187 毫秒
1.
刘振  贾嵩  王源  吉利久  张兴 《半导体学报》2009,30(12):125013-5
This paper describes an 8-bit 125 MHz low-power CMOS fully-folding analog-to-digital converter (ADC) A novel mixed-averaging distributed T/H circuit is proposed to improve the accuracy. Folding circuits are not only used in the fine converter but also in the coarse one and in the bit synchronization block to reduce the number of comparators for low power. This ADC is implemented in 0.5μm CMOS technology and occupies a die area of 2 × 1.5 mm^2. The measured differential nonlinearity and integral nonlinearity are 0.6 LSB/-0.8 LSB and 0.9 LSB/-1.2 LSB, respectively. The ADC exhibits 44.3 dB of signal-to-noise plus distortion ratio and 53.5 dB of spurious-free dynamic range for 1 MHz input sine-wave. The power dissipation is 138 mW at a sampling rate of 125 MHz at a 5 V supply.  相似文献   

2.
A low power 10-bit 125-MSPS charge-domain(CD) pipelined analog-to-digital converter(ADC) based on MOS bucket-brigade devices(BBDs) is presented.A PVT insensitive boosted charge transfer(BCT) that is able to reject the charge error induced by PVT variations is proposed.With the proposed BCT,the common mode charge control circuit can be eliminated in the CD pipelined ADC and the system complexity is reduced remarkably.The prototype ADC based on the proposed BCT is realized in a 0.18μm CMOS process,with power consumption of only 27 mW at 1.8-V supply and active die area of 1.04 mm~2.The prototype ADC achieves a spurious free dynamic range(SFDR) of 67.7 dB,a signal-to-noise ratio(SNDR) of 57.3 dB,and an effective number of bits(ENOB) of 9.0 for a 3.79 MHz input at full sampling rate.The measured differential nonlinearity(DNL) and integral nonlinearity (INL) are +0.5/-0.3 LSB and +0.7/-0.55 LSB,respectively.  相似文献   

3.
A 10-bit 250-MSPS two-channel time-interleaved charge-domain(CD) pipelined analog-to-digital converter (ADC) is presented.MOS bucket-brigade device(BBD) based CD pipelined architecture is used to achieve low power consumption.An all digital low power DLL is used to alleviate the timing mismatches and to reduce the aperture jitter.A new bootstrapped MOS switch is designed in the sample and hold circuit to enhance the IF sampling capability.The ADC achieves a spurious free dynamic range(SFDR) of 67.1 dB,signal-to-noise ratio (SNDR) of 55.1 dB for a 10.1 MHz input,and SFDR of 61.6 dB,SNDR of 52.6 dB for a 355 MHz input at full sampling rate.Differential nonlinearity(DNL) is +0.5/-0.4 LSB and integral nonlineariry(INL) is +0.8/-0.75 LSB.Fabricated in a 0.18-μm 1P6M CMOS process,the prototype 10-bit pipelined ADC occupies 1.8×1.3 mm2 of active die area,and consumes only 68 mW at 1.8 V supply.  相似文献   

4.
Apower-efficient 12-bit40-MS/spipelineanalog-to-digitalconverter(ADC)implementedina0.13 μm CMOS technology is presented. A novel CMOS bootstrapping switch, which offers a constant on-resistance over the entire input signal range, is used at the sample-and-hold front-end to enhance the dynamic performance of the pipelined ADC. By implementing with 2.5-bit-per-stage and a simplified amplifier sharing architecture between two successive pipeline stages, a very competitive power consumption and small die area can be achieved. Meanwhile, the substrate-biasing-effect attenuated T-type switches are introduced to reduce the crosstalk between the two op- amp sharing successive stages. Moreover, a two-stage gain boosted recycling folded cascode (RFC) amplifier with hybrid frequency compensation is developed to further reduce the power consumption and maintain the ADC's performance simultaneously. The measured results imply that the ADC achieves a spurious-free dynamic range (SFDR) of 75.7 dB and a signal-to-noise-plus-distortion ratio (SNDR) of 62.74 dB with a 4.3 MHz input signal; the SNDR maintains over 58.25 dB for input signals up to 19.3MHz. The measured differential nonlinearity (DNL) and integral nonlinearity (INL) are -0.43 to +0.48 LSB and -1.62 to + 1.89 LSB respectively. The prototype ADC consumes 28.4 mW under a 1.2-V nominal power supply and 40 MHz sampling rate, transferring to a figure- of-merit (FOM) of 0.63 pJ per conversion-step.  相似文献   

5.
赵南  魏琦  杨华中  汪蕙 《半导体学报》2014,35(9):095009-8
This paper demonstrates a 14-bit 100 MS/s CMOS pipelined analog-to-digital converter (ADC). The nonlinearity model for bootstrapped switches is established to optimize the design parameters of bootstrapped switches, and the calculations based on this model agree well with the measurement results. In order to achieve high linearity, a gradient-mismatch cancelling technique is proposed, which eliminates the first order gradient error of sampling capacitors by combining arrangement of reference control signals and capacitor layout. Fabricated in a 0.18-μm CMOS technology, this ADC occupies 10.16-mm2 area. With statistics-based background calibration of finite opamp gain in the first stage, the ADC achieves 83.5-dB spurious free dynamic range and 63.7-dB signalto-noise-and distortion ratio respectively, and consumes 393 mW power with a supply voltage of 2 V.  相似文献   

6.
应用于高速CMOS图像传感器的10比特列并行循环式ADC   总被引:1,自引:1,他引:0  
韩烨  李全良  石匆  吴南健 《半导体学报》2013,34(8):085016-6
This paper presents a high-speed column-parallel cyclic analog-to-digital converter(ADC) for a CMOS image sensor.A correlated double sampling(CDS) circuit is integrated in the ADC,which avoids a stand-alone CDS circuit block.An offset cancellation technique is also introduced,which reduces the column fixed-pattern noise(FPN) effectively.One single channel ADC with an area less than 0.02 mm~2 was implemented in a 0.13μm CMOS image sensor process.The resolution of the proposed ADC is 10-bit,and the conversion rate is 1.6 MS/s. The measured differential nonlinearity and integral nonlinearity are 0.89 LSB and 6.2 LSB together with CDS, respectively.The power consumption from 3.3 V supply is only 0.66 mW.An array of 48 10-bit column-parallel cyclic ADCs was integrated into an array of CMOS image sensor pixels.The measured results indicated that the ADC circuit is suitable for high-speed CMOS image sensors.  相似文献   

7.
This paper presents a 10-bit 100-MSample/s analog-to-digital(A/D) converter with pipelined folding architecture.The linearity is improved by using an offset cancellation technique and a resistive averaging interpolation network.Cascading alleviates the wide bandwidth requirement of the folding amplifier and distributed interstage track/hold amplifiers are used to realize the pipeline technique for obtaining high resolution.In SMIC 0.18μm CMOS,the A/D converter is measured as follows:the peak integral nonlinearity and differential nonlinearity are±0.48 LSB and±0.33 LSB,respectively.Input range is 1.0 VP-P with a 2.29 mm2 active area.At 20 MHz input @ 100 MHz sample clock,9.59 effective number of bits,59.5 dB of the signal-to-noise-and-distortion ratio and 82.49 dB of the spurious-free dynamic range are achieved.The dissipation power is only 95 mW with a 1.8 V power supply.  相似文献   

8.
周立人  罗磊  叶凡  许俊  任俊彦 《半导体学报》2009,30(11):115007-5
This paper presents a 12-bit 100 MS/s CMOS pipelined analog-to-digital converter (ADC) with digital background calibration. A large magnitude calibration signal is injected into the multiplying digital-to-analog converter (MDAC) while the architecture of the MDAC remains unchanged. When sampled at 100 MS/s, it takes only 2.8 s to calibrate the 12-bit prototype ADC and achieves a peak spurious-free dynamic range of 85 dB and a peak signal-to-noise plus distortion ratio of 66 dB with 2 MHz input. Integral nonlinearity is improved from 1.9 to 0.6 least significant bits after calibration. The chip is fabricated in a 0.18μm CMOS process, occupies an active area of 2.3 × 1.6 mm^2, and consumes 205 mW at 1.8 V.  相似文献   

9.
A 13-bit 8 MSample/s high-accuracy CMOS pipeline ADC is proposed. At the input, the sample-andhold amplifier (SHA) is removed for low power and low noise; meanwhile, an improved sampling circuit is adopted to alleviate the clock skew effect. On-chip bias current is programmable to achieve low power dissipation at different sampling rates. Particularly, drain-to-source voltages in the operational amplifiers (opamps) are fixed to ensure high DC gain within the variant range of the bias current. Both on-chip and off-chip decoupling capacitors are used in the voltage reference circuit in consideration of low power and stability. The proposed ADC was implemented in 0.18-μm 1P6M CMOS technology. With a 2.4-MHz input, the measured peak SNDR and SFDR are 74.4 and 91.6 dB at 2.5 MSample/s, 74.3 and 85.4 dB at 8.0 MSample/s. It consumes 8.1, 21.6, 29.7, and 56.7 mW (including I/O drivers) when operating at 1.5, 2.5, 5.0, and 8.0 MSample/s with 2.7 V power supply, respectively. The chip occupies 3.2 mm^2, including I/O pads.  相似文献   

10.
This paper presents a differential successive approximation register analog-to-digital converter (SAR ADC) with a novel time-domain comparator design for wireless sensor networks. The prototype chip has been implemented in the UMC 0.18-μ m 1P6M CMOS process. The proposed ADC achieves a peak ENOB of 7.98 at an input frequency of 39.7 kHz and sampling rate of 180 kHz. With the Nyquist input frequency, 68.49-dB SFDR, 7.97-ENOB is achieved. A simple quadrate layout is adopted to ease the routing complexity of the common-centroid symmetry layout. The ADC maintains a maximum differential nonlinearity of less than 0.08 LSB and integral nonlinearity less than 0.34 LSB by this type of layout.  相似文献   

11.
A multi-channel,fully differential programmable chip for neural recording application is presented.The integrated circuit incorporates eight neural recording amplifiers with tunable bandwidth and gain,eight 4thorder Bessel switch capacitor filters,an 8-to-1 analog time-division multiplexer,a fully differential successive approximation register analog-to-digital converter(SAR ADC),and a serial peripheral interface for communication.The neural recording amplifier presents a programmable gain from 53 dB to 68 dB,a tunable low cut-off frequency from 0.1 Hz to 300 Hz,and 3.77 μVrms input-referred noise over a 5 kHz bandwidth.The SAR ADC digitizes signals at maximum sampling rate of 20 kS/s per channel and achieves an ENOB of 7.4.The integrated circuit is designed and fabricated in 0.18-μm CMOS mix-signal process.We successfully performed a multi-channel in-vivo recording experiment from a rat cortex using the neural recording chip.  相似文献   

12.
A wideband large dynamic range and high linearity U-band RF front-end for mobile DTV is introduced,and includes a noise-cancelling low-noise amplifier(LNA),an RF programmable gain amplifier(RFPGA) and a current communicating passive mixer.The noise/distortion cancelling structure and RC post-distortion compensation are employed to improve the linearity of the LNA.An RFPGA with five stages provides large dynamic range and fine gain resolution.A simple resistor voltage network in the passive mixer decreases the gate bias voltage of the mixing transistor,and optimum linearity and symmetrical mixing is obtained at the same time.The RF front-end is implemented in a 0.25 μm CMOS process.Tests show that it achieves an ⅡP3(third-order intercept point) of –17 dBm,a conversion gain of 39 dB,and a noise figure of 5.8 dB.The RFPGA achieves a dynamic range of –36.2 to 23.5 dB with a resolution of 0.32 dB.  相似文献   

13.
Abstract: Real-time digital service and mul- timedia service upstream transmission in Dig- ital Signal Processing (DSP)-based Orthogo- nal Frequency Division Multiplexing-Passive Optical Network (OFDM-PON) is experimen- tally demonstrated with Centralised Light Sou- rce (CLS) configuration in this paper. After transmitted over 25 km Standard Single Mode Fibre (SSMF) with -16.5 dBm optical power at receiver, the Bit Error Rate (BER) is 9.5 ×10^-11. The implementations of digital domain up-conversion and down-conversion based on Field Programmable Gate Array (FPGA) are int- roduced, which can reduce the cost of In-ph- ase and Quadrature (IQ) radio frequency mix- ers utilised at transmitter and receiver. A car- rier synchronization algorithm is implemented for compensating carrier offset. A channel eq- ualization algorithm is adopted for compen- sating the damage of channel. A new structure of Frequency Synchronization Unit (FSU) des- igned in FPGA is also proposed to cope with the frequency shifting at receiver.  相似文献   

14.
Community Question Answering (CQA) websites have greatly facilitated users' lives, with an increasing number of people seeking help and exchanging ideas on the Internet. This newlymerged community features two characteristics: social relations and an ask-reply mechanism. As users' behaviours and social statuses play a more important role in CQA services than traditional answer retrieving websites, researchers' concerns have shifted from the need to passively find existing answers to actively seeking potential reply providers that may give answers in the near future. We analyse datasets derived from an online CQA system named "Quora", and observed that compared with traditional question answering services, users tend to contribute replies rather than questions for help in the CQA system. Inspired by the findings, we seek ways to evaluate the users' ability to offer prompt and reliable help, taking into account activity, authority and social reputation char- acteristics. We propose a hybrid method that is based on a Question-User network and social network using optimised PageRank algorithm. Experimental results show the efficiency of the proposed method for ranking potential answer-providers.  相似文献   

15.
16.
A low power high gain gain-controlled LNA + mixer for GNSS receivers is reported. The high gain LNA is realized with a current source load. Its gain-controlled ability is achieved using a programmable bias circuit. Taking advantage of the high gain LNA, a high noise figure passive mixer is adopted. With the passive mixer, low power consumption and high voltage gain of the LNA + mixer are achieved. To fully investigate the performance of this circuit, comparisons between a conventional LNA + mixer, a previous low power LNA + mixer, and the proposed LNA + mixer are presented. The circuit is implemented in 0.18 #m mixed-signal CMOS technology. A 3.8 dB noise figure, an overall 45 dB converge gain and a 10 dB controlled gain range of the two stages are measured. The chip occupies 0.24 mm2 and consumes 2 mA current under 1.8 V supply.  相似文献   

17.
一种应用于GPS接收机的高线性度SiGe HBT低噪声放大器   总被引:1,自引:1,他引:0  
A high linearity 1.575 GHz SiGe:HBT low noise amplifier (LNA) for global positioning system applications is described. The bipolar cascoded with an MOSFET LNA was fabricated in a commercial 0.18 μm SiGe BiCMOS process, A resistor bias feed circuit with a feedback resistor was designed for the LNA input transistor to improve its intermodulation and compression performance. The packaged chip tested on board has displayed a noise figure of 1. I 1 dB, a power gain of 18 dB, an output 1 dB compression point of +7.8 dBm and an input third-order intercept point of +1.8 dBm. The chip occupies a 500 × 560μm^2 area and consumes 3.6 mA from a 2.85 V power supply.  相似文献   

18.
A low phase noise and low spur phase locked loop (PLL) frequency synthesizer for use in global navigation satellite system (GNSS) receivers is proposed. To get a low spur, the symmetrical structure of the phase frequency detector (PFD) produces four control signals, which can reach the charge pump (CP) simultaneously, and an improved CP is realized to minimize the charge sharing and the charge injection and make the current matched. Additionally, the delay is controllable owing to the programmable PFD, so the dead zone of the CP can be eliminated. The output frequency of the VCO can be adjusted continuously and precisely by using a programmable LC-TANK. The phase noise of the VCO is lowered by using appropriate MOS sizes. The proposed PLL frequency synthesizer is fabricated in a 0.18 μm mixed-signal CMOS process. The measured phase noise at 1 MHz offset from the center frequency is -127.65 dBc/Hz and the reference spur is -73.58 dBc.  相似文献   

19.
This paper presents a wideband RF front-end with novel current-reuse wide band low noise amplifier(LNA),current-reuse V –I converter,active double balanced mixer and transimpedance amplifier for short range device(SRD) applications.With the proposed current-reuse LNA,the DC consumption of the front-end reduces considerably while maintaining sufficient performance needed by SRD devices.The RF front-end was fabricated in 0.18 μm RFCMOS process and occupies a silicon area of just 0.11 mm2.Operating in 433 MHz band,the measurement results show the RF front-end achieves a conversion gain of 29.7 dB,a double side band noise figure of 9.7 dB,an input referenced third intercept point of –24.9 dBm with only 1.44 mA power consumption from 1.8 V supply.Compared to other reported front-ends,it has an advantage in power consumption.  相似文献   

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